{"title":"Keynote 1: Is GaN a Game Changing Device ?","authors":"F. Lee","doi":"10.1109/EPEPEMC.2014.6980498","DOIUrl":null,"url":null,"abstract":"Gallium Nitride devices are gathering momentum, with a number of recent market introductions for such applications as point of load converters (POL), off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance and, therefore, are capable of operating at a switching frequency 10 times of that of the silicon MOSFET. This might significantly impact the power density, form factor and even the current design and manufacturing practice.","PeriodicalId":325670,"journal":{"name":"2014 16th International Power Electronics and Motion Control Conference and Exposition","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 16th International Power Electronics and Motion Control Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPEMC.2014.6980498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

Gallium Nitride devices are gathering momentum, with a number of recent market introductions for such applications as point of load converters (POL), off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance and, therefore, are capable of operating at a switching frequency 10 times of that of the silicon MOSFET. This might significantly impact the power density, form factor and even the current design and manufacturing practice.
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主题演讲1:GaN是改变游戏规则的设备吗?
氮化镓器件正蓄势待发,最近市场上推出了许多应用,如负载点转换器(POL)、离线开关电源、电池充电器和电机驱动器。GaN器件具有更低的栅极电荷和更低的输出电容,因此能够以10倍于硅MOSFET的开关频率工作。这可能会显著影响功率密度、外形因素,甚至当前的设计和制造实践。
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