X Band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications

Arrnagan Gurdal, Burak Alptug Yilmaz, O. Cengiz, O. Sen, E. Ozbay
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引用次数: 2

Abstract

An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (PAE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.
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用于空间应用的36.5dBm P1-dB X波段GaN基MMIC功率放大器
提出了一种基于SiC技术的AlGaN/GaN共面波导的x波段单片微波集成电路(MMIC)高功率放大器。选择共面波导技术(CPW)是因为其工艺简单且成本低,因为共面波导工艺没有通孔。高电子迁移率晶体管(hemt)匹配于8ghz -8.4 ghz频段,以获得最大输出功率。该放大器具有10 dB以上的小信号增益,在1dB增益压缩点(P1dB)输出功率为36.5dBm,在Vds = 30V的期望频段(8ghz -8.4 GHz),在(PldB)处功率增加效率(PAE)为40%。
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