{"title":"Effect of local random variation on gate-level delay and leakage statistical analysis","authors":"Jae Hoon Kim, Wook Kim, Young Hwan Kim","doi":"10.1109/ASQED.2009.5206258","DOIUrl":null,"url":null,"abstract":"In this paper, we analyzes the error due to the effects of local random variation on delay and leakage in the gate level statistical modeling. In experiments with various gates, without considering the local random variation showed over 20% of maximum error on the gate delay standard deviation, when compared with the results considering the local random variation. Moreover, in the aspect of leakage, without considering the local random variation causes maximum 10% of mean leakage error and over 300% of standard deviation error, when compared with the results considering the local random variation. Since conventional gate-level statistical model does not consider the local random variation, large local random variation may cause the significant error. Therefore, novel gate-level statistical modeling method considering the local random variation is required.","PeriodicalId":437303,"journal":{"name":"2009 1st Asia Symposium on Quality Electronic Design","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 1st Asia Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASQED.2009.5206258","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we analyzes the error due to the effects of local random variation on delay and leakage in the gate level statistical modeling. In experiments with various gates, without considering the local random variation showed over 20% of maximum error on the gate delay standard deviation, when compared with the results considering the local random variation. Moreover, in the aspect of leakage, without considering the local random variation causes maximum 10% of mean leakage error and over 300% of standard deviation error, when compared with the results considering the local random variation. Since conventional gate-level statistical model does not consider the local random variation, large local random variation may cause the significant error. Therefore, novel gate-level statistical modeling method considering the local random variation is required.