Effect of local random variation on gate-level delay and leakage statistical analysis

Jae Hoon Kim, Wook Kim, Young Hwan Kim
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引用次数: 1

Abstract

In this paper, we analyzes the error due to the effects of local random variation on delay and leakage in the gate level statistical modeling. In experiments with various gates, without considering the local random variation showed over 20% of maximum error on the gate delay standard deviation, when compared with the results considering the local random variation. Moreover, in the aspect of leakage, without considering the local random variation causes maximum 10% of mean leakage error and over 300% of standard deviation error, when compared with the results considering the local random variation. Since conventional gate-level statistical model does not consider the local random variation, large local random variation may cause the significant error. Therefore, novel gate-level statistical modeling method considering the local random variation is required.
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局部随机变化对门级延迟和泄漏统计分析的影响
本文分析了门电平统计建模中局部随机变化对延迟和泄漏的影响所产生的误差。在各种门的实验中,与考虑局部随机变化的结果相比,不考虑局部随机变化的门延迟标准差的最大误差超过20%。此外,在泄漏方面,与考虑局部随机变化的结果相比,不考虑局部随机变化的结果导致平均泄漏误差最大10%,标准差误差超过300%。由于传统的门级统计模型没有考虑局部随机变化,较大的局部随机变化可能导致较大的误差。因此,需要一种考虑局部随机变化的门级统计建模方法。
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Next generation I/O power delivery design through SIPD co-analysis & comprehensive platform validation Effect of local random variation on gate-level delay and leakage statistical analysis Mutual exploration of FinFET technology and circuit design options for implementing compact brute-force latches Automatic error recovery in targetless logic emulation An automated approach for the diagnosis of multiple faults in FPGA interconnects
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