F. H. Koklu, A. Vamivakas, J. I. Quesnel, S. Ippolito, B. Goldberg, M. Unlu
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引用次数: 1
Abstract
We report a lateral spatial resolution of 0.37 mum with a custom infrared widefield microscope while imaging subsurface features in silicon integrated circuits from backside. In addition, 2.65 mum apart polysilicon and metal layers can be differentiated.
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