{"title":"Room-Temperature Direct Bonding for Integrated Optical Devices","authors":"R. Takei, K. Abe, T. Mizumoto","doi":"10.1109/INOW.2008.4634511","DOIUrl":null,"url":null,"abstract":"We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"258 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634511","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.
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