Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634511
R. Takei, K. Abe, T. Mizumoto
We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.
{"title":"Room-Temperature Direct Bonding for Integrated Optical Devices","authors":"R. Takei, K. Abe, T. Mizumoto","doi":"10.1109/INOW.2008.4634511","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634511","url":null,"abstract":"We report a room-temperature direct bonding technique for wafer combinations of InP-Ce:YIG, Si-InP and Si-LiNbO3. This technique is versatile for integrating optical devices that are composed of different crystals.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131988788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382692
Sae-Kyoung Kang, Dong-Soo Lee, Hyunwoo Cho, J. Ko
We demonstrate a carrier-suppressed return-to-zero signal generator, which employs a single-stage external modulator and a newly designed wideband signal mixer. The wideband signal mixer is implemented by using 0.13-mum CMOS technology.
我们演示了一种载波抑制归零信号发生器，它采用单级外部调制器和新设计的宽带信号混频器。宽带信号混频器采用0.13 μ m CMOS技术实现。
{"title":"Implementation of CSRZ Signal Generator Using a Single-Stage External Modulator and a Wideband CMOS Signal Mixer","authors":"Sae-Kyoung Kang, Dong-Soo Lee, Hyunwoo Cho, J. Ko","doi":"10.1109/LEOS.2007.4382692","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382692","url":null,"abstract":"We demonstrate a carrier-suppressed return-to-zero signal generator, which employs a single-stage external modulator and a newly designed wideband signal mixer. The wideband signal mixer is implemented by using 0.13-mum CMOS technology.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115213684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382483
K. Bergman
The recent emergence of multicore processor architectures is challenging the on-chip and inter-node communications infrastructure. We present the design of a silicon photonic network-on-chip that can deliver a high-bandwidth, low-latency, and power efficient scalable solution for future chip multiprocessors.
{"title":"Silicon Photonic On-Chip Optical Interconnection Networks","authors":"K. Bergman","doi":"10.1109/LEOS.2007.4382483","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382483","url":null,"abstract":"The recent emergence of multicore processor architectures is challenging the on-chip and inter-node communications infrastructure. We present the design of a silicon photonic network-on-chip that can deliver a high-bandwidth, low-latency, and power efficient scalable solution for future chip multiprocessors.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115397023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382689
R. Griffin
The requirements driving the development of complex optical modulator structures are discussed, and approaches towards integration with InP technology described.
讨论了推动复杂光调制器结构发展的需求，并描述了与InP技术集成的方法。
{"title":"Advanced Optical Modulators on InP","authors":"R. Griffin","doi":"10.1109/LEOS.2007.4382689","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382689","url":null,"abstract":"The requirements driving the development of complex optical modulator structures are discussed, and approaches towards integration with InP technology described.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115647465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382524
F. Gérôme, Jonathan C. Knight, J. Clowes, William J. Wadsworth
Compression of chirped input pulses results in soliton propagation in hollow-core photonic bandgap fibers. 5.5 ps input pulses from a fiber laser at 1064 nm were compressed to 520 fs in 8 m of fiber, at 150 nJ pulse energies.
{"title":"High Power Pulse Compression with Soliton Delivery in Hollow-Core Photonic Bandgap Fiber","authors":"F. Gérôme, Jonathan C. Knight, J. Clowes, William J. Wadsworth","doi":"10.1109/LEOS.2007.4382524","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382524","url":null,"abstract":"Compression of chirped input pulses results in soliton propagation in hollow-core photonic bandgap fibers. 5.5 ps input pulses from a fiber laser at 1064 nm were compressed to 520 fs in 8 m of fiber, at 150 nJ pulse energies.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117218760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382527
F. Gérôme, K. Cook, A. George, W. Wadsworth, J. Knight
We report adiabatic soliton pulse compression in a tapered hollow-core photonic bandgap fiber. We compress 195 fs input pulses at 800 nm wavelength to less than 100 fs after propagation through 8 m of fiber, at 50 nJ pulse energies.
{"title":"Compression of Femtosecond Solitons in 8m of Tapered Hollow-Core Photonic Bandgap Fiber","authors":"F. Gérôme, K. Cook, A. George, W. Wadsworth, J. Knight","doi":"10.1109/LEOS.2007.4382527","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382527","url":null,"abstract":"We report adiabatic soliton pulse compression in a tapered hollow-core photonic bandgap fiber. We compress 195 fs input pulses at 800 nm wavelength to less than 100 fs after propagation through 8 m of fiber, at 50 nJ pulse energies.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127105290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382336
A. Poloczek, M. Weiss, S. Fedderwitz, A. Stoehr, W. Prost, D. Jaeger, F. Tegude
An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.
{"title":"Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications","authors":"A. Poloczek, M. Weiss, S. Fedderwitz, A. Stoehr, W. Prost, D. Jaeger, F. Tegude","doi":"10.1109/LEOS.2007.4382336","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382336","url":null,"abstract":"An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127248809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382665
Fang Qian, C. Lieber
Semiconductor nanowires can function as both gain medium and optical cavity, and thus represent a unique class of miniaturized laser sources for the assembly of nanoscale photonic systems. In this talk we will review the rational design and synthesis of nanowires and nanowire heterostructures as laser sources, describe how their structure design interplays with optical properties, and discuss exciting device applications. Group III-nitride nanowire structures will be used as a model system to illustrate our approach towards nanowire lasers. First, the general synthetic strategy for rational growth of semiconductor nanowires and the underlying physical mechanism of lasing in these materials will be reviewed. Second, structural characterization and photoluminescence studies of homogeneous GaN nanowires will be discussed. These studies will illuminate how basic structural characteristics affect threshold for ultraviolet room-temperature lasing in these homogeneous structures. Third, multicolor nanowire lasers based on InGaN multi-quantum well (MQW) radial nanowire heterostructures will be described. Cross-sectional transmission electron microscopy studies allow direct visualization of well-defined internal interfaces and demonstrate our ability to control quantum well growth down to atomic level. These functional nanowire structures were optically pumped individually to lasing from 380 to 494 nm at room temperature, depending on the alloy composition of MQWs. Key factors contributing to the lasing threshold were evaluated by three-dimensional finite-difference time-domain calculations. Last, current injection schemes for electrically-driven nanowire light-emitting diodes/lasers with the emphasis on n-GaN/InGaN MQW/p-AlGaN/p-GaN radial nanowire heterostructures will be discussed.
{"title":"Semiconductor Nanowire Lasers","authors":"Fang Qian, C. Lieber","doi":"10.1109/LEOS.2007.4382665","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382665","url":null,"abstract":"Semiconductor nanowires can function as both gain medium and optical cavity, and thus represent a unique class of miniaturized laser sources for the assembly of nanoscale photonic systems. In this talk we will review the rational design and synthesis of nanowires and nanowire heterostructures as laser sources, describe how their structure design interplays with optical properties, and discuss exciting device applications. Group III-nitride nanowire structures will be used as a model system to illustrate our approach towards nanowire lasers. First, the general synthetic strategy for rational growth of semiconductor nanowires and the underlying physical mechanism of lasing in these materials will be reviewed. Second, structural characterization and photoluminescence studies of homogeneous GaN nanowires will be discussed. These studies will illuminate how basic structural characteristics affect threshold for ultraviolet room-temperature lasing in these homogeneous structures. Third, multicolor nanowire lasers based on InGaN multi-quantum well (MQW) radial nanowire heterostructures will be described. Cross-sectional transmission electron microscopy studies allow direct visualization of well-defined internal interfaces and demonstrate our ability to control quantum well growth down to atomic level. These functional nanowire structures were optically pumped individually to lasing from 380 to 494 nm at room temperature, depending on the alloy composition of MQWs. Key factors contributing to the lasing threshold were evaluated by three-dimensional finite-difference time-domain calculations. Last, current injection schemes for electrically-driven nanowire light-emitting diodes/lasers with the emphasis on n-GaN/InGaN MQW/p-AlGaN/p-GaN radial nanowire heterostructures will be discussed.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126123395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382461
A. Passaseo, A. Salhi, M. Todaro, L. Fortunato, V. Tasco, M. de Vittorio
In this work, we show that a modal gain as high as 42cm-1 could be achieved from a device containing 7 InAs/InGaAs stacked QD layers. The enhancement of the modal gain is accompanied by a decrease of the threshold and transparency current densities per QD layer down to 16 and 7 A cm-2, respectively. Moreover, a linear increase of the modal gain with the number of QD layers is observed. The obtained high modal gain allows us to achieve good temperature stability and high-speed operation in a wide temperature range. Modulation eye diagrams under 10 Gb/s are achieved in 15degC-50degC range in a single- transverse mode 1.3mum QD lasers. High characteristic temperature of about 110 K between 15degC and 85degC are reported.
在这项工作中，我们证明了一个包含7个InAs/InGaAs堆叠QD层的器件可以实现高达42cm-1的模态增益。模态增益的增强伴随着阈值和透明电流密度的降低，每个QD层分别降至16和7 a cm-2。此外，模态增益随量子点阵层数线性增加。获得的高模态增益使我们能够在较宽的温度范围内实现良好的温度稳定性和高速运行。在单横模1.3 μ m QD激光器中，在15°c -50°c范围内实现了10 Gb/s的调制眼图。在15℃~ 85℃之间有110 K左右的高特征温度。
{"title":"High Gain 1300 nm Quantum Dot Lasers","authors":"A. Passaseo, A. Salhi, M. Todaro, L. Fortunato, V. Tasco, M. de Vittorio","doi":"10.1109/LEOS.2007.4382461","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382461","url":null,"abstract":"In this work, we show that a modal gain as high as 42cm-1 could be achieved from a device containing 7 InAs/InGaAs stacked QD layers. The enhancement of the modal gain is accompanied by a decrease of the threshold and transparency current densities per QD layer down to 16 and 7 A cm-2, respectively. Moreover, a linear increase of the modal gain with the number of QD layers is observed. The obtained high modal gain allows us to achieve good temperature stability and high-speed operation in a wide temperature range. Modulation eye diagrams under 10 Gb/s are achieved in 15degC-50degC range in a single- transverse mode 1.3mum QD lasers. High characteristic temperature of about 110 K between 15degC and 85degC are reported.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126859822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-11-12DOI: 10.1109/LEOS.2007.4382594
J. F. Young, M. Mccutcheon, G. Rieger, D. Dalacu, S. Frederick, P. Poole, Robin L. Williams
The second harmonic radiation emitted into the top half space from three dimensionally localized modes of L3 defect cavities in InP-based planar photonic crystals is studied using both CW and pulsed excitation. The far field harmonic radiation patterns observed from modes with resonant wavelengths ~ 1550 nm, excited by a tunable CW laser with less than 1 mW power, reveal strong local field enhancement (> 1000 X). A detailed comparison with FDTD modeling allows us to conclude that the bulk InP second order susceptibility tensor dominates the second order response of these microcavities. When a broadband, sub picoseconds source is used to simultaneously excite two of the microcavity modes, the harmonic spectrum in general consists of three contributions, the second harmonic from each of the excited modes, and a third peak due to the second order (sum frequency) mixing of the two modes. By using short and long pulse excitation simultaneously, we demonstrate how the emission frequency due to sum frequency processes can be used to continuously tune the harmonic emission frequency dependent on the occupation of various cavity modes.
{"title":"Second Harmonic and Sum Frequency Generation in Sub-Micron 3D Photonic Crystal Microcavities","authors":"J. F. Young, M. Mccutcheon, G. Rieger, D. Dalacu, S. Frederick, P. Poole, Robin L. Williams","doi":"10.1109/LEOS.2007.4382594","DOIUrl":"https://doi.org/10.1109/LEOS.2007.4382594","url":null,"abstract":"The second harmonic radiation emitted into the top half space from three dimensionally localized modes of L3 defect cavities in InP-based planar photonic crystals is studied using both CW and pulsed excitation. The far field harmonic radiation patterns observed from modes with resonant wavelengths ~ 1550 nm, excited by a tunable CW laser with less than 1 mW power, reveal strong local field enhancement (> 1000 X). A detailed comparison with FDTD modeling allows us to conclude that the bulk InP second order susceptibility tensor dominates the second order response of these microcavities. When a broadband, sub picoseconds source is used to simultaneously excite two of the microcavity modes, the harmonic spectrum in general consists of three contributions, the second harmonic from each of the excited modes, and a third peak due to the second order (sum frequency) mixing of the two modes. By using short and long pulse excitation simultaneously, we demonstrate how the emission frequency due to sum frequency processes can be used to continuously tune the harmonic emission frequency dependent on the occupation of various cavity modes.","PeriodicalId":110592,"journal":{"name":"LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115322707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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