{"title":"Defect-oriented analysis of memory BIST tests","authors":"A. Jee","doi":"10.1109/MTDT.2002.1029756","DOIUrl":null,"url":null,"abstract":"This paper describes a defect-oriented analysis of 4 BIST tests that are used to test a commercial 6-port embedded SRAM. We examine the realistic fault and defect coverages of these memory BIST tests. We also uncover the subtle effect that addressing order has on the coverage that a test can provide. In addition, we show that the coverage that a test provides can vary from row to row depending on the addressing scheme.","PeriodicalId":230758,"journal":{"name":"Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2002 IEEE International Workshop on Memory Technology, Design and Testing (MTDT2002)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2002.1029756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

This paper describes a defect-oriented analysis of 4 BIST tests that are used to test a commercial 6-port embedded SRAM. We examine the realistic fault and defect coverages of these memory BIST tests. We also uncover the subtle effect that addressing order has on the coverage that a test can provide. In addition, we show that the coverage that a test provides can vary from row to row depending on the addressing scheme.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
面向缺陷的记忆类BIST测试分析
本文描述了用于测试商用6端口嵌入式SRAM的4个BIST测试的缺陷导向分析。我们考察了这些内存测试的实际错误和缺陷覆盖率。我们还揭示了寻址顺序对测试所能提供的覆盖率的微妙影响。此外,我们还展示了测试提供的覆盖率可以随寻址方案的不同而变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Design and test of a 9-port SRAM for a 100 Gb/s STS-1 switch A fault modeling technique to test memory BIST algorithms A novel memory array based on an annular single-poly EPROM cell for use in standard CMOS technology Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC) Fast and compact error correcting scheme for reliable multilevel flash memories
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1