Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers

O. Parillaud, G. de Naurois, B. Simozrag, V. Trinité, G. Maisons, M. Garcia, B. Gérard, M. Carras, W. Metaferia, C. Junesand, H. Kataria, Y. Sun, S. Lourdudoss
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Abstract

We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semiinsulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.
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实现埋置单脊和μ条纹量子级联激光器的多个再生步骤
本文报道了利用半绝缘InP:Fe和Si掺杂层的HVPE和MOVPE再生步骤实现埋地单脊和μ条纹量子级联激光器。我们在这里给出了在这些装置上获得的初步结果。本文展示了利用半绝缘InP:Fe进行再生长平面化和μ条纹阵列方法降低热阻的效果,并对性能进行了展望。
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Monolithically integrated optical link using photonic crystal laser and photodetector Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers Preparation of single-domain Si(100) surfaces with in situ control in CVD ambient 5 GHz low-power RTD-based amplifier MMIC with a high figure-of-merit of 24.5 dB/mW MOCVD growth and device characterization of InP/GaAsSb/InP DHBTs with a GaAs spacer
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