{"title":"Femtosecond time-domain experimental characterization of ballistic transport in semiconducting nanostructures","authors":"R. Sobolewski","doi":"10.1109/PHOSST.2010.5553708","DOIUrl":null,"url":null,"abstract":"We present sub-picosecond time-domain (THz bandwidth) characterization of novel ballistic transport electronic devices operated at room temperature, using a photoconductive switch for picosecond electrical pulse excitation and a femtosecond temporal resolution electro-optic sampling technique.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Society Summer Topicals 2010","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOSST.2010.5553708","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We present sub-picosecond time-domain (THz bandwidth) characterization of novel ballistic transport electronic devices operated at room temperature, using a photoconductive switch for picosecond electrical pulse excitation and a femtosecond temporal resolution electro-optic sampling technique.
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