E. Edwards, R. Audet, S. Claussen, R. Schaevitz, E. Tasyurek, S. Ren, Y. Rong, T. Kamins, J. Harris, D. Miller, O. Dosunmu, M. Unlu
{"title":"Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined stark effect electroabsorption modulator","authors":"E. Edwards, R. Audet, S. Claussen, R. Schaevitz, E. Tasyurek, S. Ren, Y. Rong, T. Kamins, J. Harris, D. Miller, O. Dosunmu, M. Unlu","doi":"10.1109/PHOTONICS.2010.5698987","DOIUrl":null,"url":null,"abstract":"The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator structure grown on silicon.","PeriodicalId":440419,"journal":{"name":"IEEE Photonics Society Summer Topicals 2010","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Society Summer Topicals 2010","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOTONICS.2010.5698987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator structure grown on silicon.
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