Measurement of interconnect loss due to dummy fills

A. Tsuchiya, H. Onodera
{"title":"Measurement of interconnect loss due to dummy fills","authors":"A. Tsuchiya, H. Onodera","doi":"10.1109/SPI.2007.4512261","DOIUrl":null,"url":null,"abstract":"This paper reports measurement results of on-chip interconnects with CMP dummy fill. CMP dummy fill is a floating metal for metal density adjustment. In high frequency above 10 GHz, the eddy current induced in dummy fills affects the interconnect loss. We fabricated test structures of on-chip interconnect with dummy fills. From the measurement results, the effect of the dummy fills on the wire resistance is not negligible even if the ground wires are adjacent to the signal wire. The dummy fills in the upper/lower metal layer affect the wire resistance and the resistance increases by 20% at 50 GHz.","PeriodicalId":206352,"journal":{"name":"2007 IEEE Workshop on Signal Propagation on Interconnects","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Workshop on Signal Propagation on Interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPI.2007.4512261","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

This paper reports measurement results of on-chip interconnects with CMP dummy fill. CMP dummy fill is a floating metal for metal density adjustment. In high frequency above 10 GHz, the eddy current induced in dummy fills affects the interconnect loss. We fabricated test structures of on-chip interconnect with dummy fills. From the measurement results, the effect of the dummy fills on the wire resistance is not negligible even if the ground wires are adjacent to the signal wire. The dummy fills in the upper/lower metal layer affect the wire resistance and the resistance increases by 20% at 50 GHz.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
由假填充引起的互连损耗的测量
本文报道了采用CMP虚拟填充的片上互连的测量结果。CMP假体填料是一种用于调整金属密度的浮动金属。在10ghz以上的高频中,假填充中产生的涡流影响互连损耗。我们制作了带有假填充物的片上互连测试结构。从测量结果来看,即使地线与信号线相邻,假填充对导线电阻的影响也是不可忽略的。上/下金属层的假人填充影响导线电阻,在50 GHz时电阻增加20%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On relative error minimization in passivity enforcement schemes Measurement of interconnect loss due to dummy fills Analytical calculation of the point-to-point partial inductance of a perfect ground plane Removing redundancy in interconnect simulation using domain decomposition techniques Fast calculation of PEEC macromodels using frequency derivatives
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1