Hoon Chang, Jaejune Jang, Minhwan Kim, eung-Kyu Lee, D. Jang, Junsung Park, Jaehyeon Jung, Changjoon Yoon, Sung-Ryoul Bae, Chan Park
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引用次数: 24
Abstract
This paper presents BCD process integrating 7V to 70V power devices on 0.13um CMOS platform for various power management applications. BJT, Zener diode and Schottky diode are available and non-volatile memory is embedded as well. LDMOS shows best-in-class specific Ron (RSP) vs. BVDSS characteristics (i.e., 70V NMOS has RSP of 69mΩ-mm2 with BVDSS of 89V). Modular process scheme is used for flexibility to various requirements of applications.
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