Shuang Song, M. Rooijakkers, P. Harpe, C. Rabotti, M. Mischi, A. Roermund, E. Cantatore
{"title":"A 430nW 64nV/vHz current-reuse telescopic amplifier for neural recording applications","authors":"Shuang Song, M. Rooijakkers, P. Harpe, C. Rabotti, M. Mischi, A. Roermund, E. Cantatore","doi":"10.1109/BioCAS.2013.6679704","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power low-noise amplifier for neural recording applications. A single-stage current-reuse telescopic topology is proposed to achieve high DC gain and improve the noise efficiency factor (NEF) while allowing the amplifier to be scaled for high bandwidth sensing applications and/or to achieve lower thermal noise floor. The design is fabricated in a standard 0.18μm CMOS process and occupies an active area of 0.16mm2. Experimental measurements show a 430nW power consumption from a 1.2V supply, a thermal noise floor of 63.8nV/√Hz and a corresponding NEF of 1.5.","PeriodicalId":344317,"journal":{"name":"2013 IEEE Biomedical Circuits and Systems Conference (BioCAS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Biomedical Circuits and Systems Conference (BioCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BioCAS.2013.6679704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33
Abstract
This paper presents a low-power low-noise amplifier for neural recording applications. A single-stage current-reuse telescopic topology is proposed to achieve high DC gain and improve the noise efficiency factor (NEF) while allowing the amplifier to be scaled for high bandwidth sensing applications and/or to achieve lower thermal noise floor. The design is fabricated in a standard 0.18μm CMOS process and occupies an active area of 0.16mm2. Experimental measurements show a 430nW power consumption from a 1.2V supply, a thermal noise floor of 63.8nV/√Hz and a corresponding NEF of 1.5.