{"title":"CVD Monolayer tungsten-based PMOS Transistor with high performance at Vds = -1 V","authors":"Xin Wang, Yanqing Wu","doi":"10.1109/ICTA56932.2022.9963068","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) semiconducting materials channels enable ultimate scaling of transistors and will help Moore's Law Scaling for decades. In this paper, we reported p-type WSe2transistors using monolayer (¬0.85 nm) channels by molten-salt-assisted chemical vapor deposition. The transfer-free back-gate devices fabricated based on 100 nm SiO2/Si substrate exhibit highest on current at Vds= -1 V among transistors of monolayer p-WSe2, and a high on/off ratio up to 108.","PeriodicalId":325602,"journal":{"name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTA56932.2022.9963068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Two-dimensional (2D) semiconducting materials channels enable ultimate scaling of transistors and will help Moore's Law Scaling for decades. In this paper, we reported p-type WSe2transistors using monolayer (¬0.85 nm) channels by molten-salt-assisted chemical vapor deposition. The transfer-free back-gate devices fabricated based on 100 nm SiO2/Si substrate exhibit highest on current at Vds= -1 V among transistors of monolayer p-WSe2, and a high on/off ratio up to 108.
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