W. Van Der Stricht, I. Moerman, P. Demeester, E. Thrush, J. Crawley
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Abstract
Recently the group III-nitrides (In,Ga)N have attracted much attention because of the high potential for the fabrication of light emitting devices operating in the red to ultraviolet wavelength range. Despite the recent success in realizing devices, only few reports have been made on growth of InGaN. In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapor phase epitaxy in a close spaced vertical rotating disk reactor is investigated. The effect of the growth temperature, V/III ratio and rotation speed is investigated. Some early results on InGaN/GaN quantum well structures are also discussed.
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