1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619146
B. Villeneuve, H.B. Kim, M. Cyr, D. Gariépy
With the 100/200 GHz channel spacing of current commercial DWDM systems, severe restrictions are imposed on transmitter wavelengths in order to meet crosstalk specifications and ensure reliable operation of the system in all conditions of its 25 years lifetime. While very stable in the short-term, free-running DFB laser transmitters are expected to exhibit long-term wavelength drifts exceeding these requirements, leading to a need for practical wavelength monitoring and control. In this paper we describe a compact dither free wavelength stabilization method based on a Fabry-Perot (FP) filter. While the concept can be implemented in a stand-alone unit, its small footprint allows its incorporation into existing laser modules without increasing either real estate or dissipated power.
{"title":"A compact wavelength stabilization scheme for telecommunication transmitters","authors":"B. Villeneuve, H.B. Kim, M. Cyr, D. Gariépy","doi":"10.1109/LEOSST.1997.619146","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619146","url":null,"abstract":"With the 100/200 GHz channel spacing of current commercial DWDM systems, severe restrictions are imposed on transmitter wavelengths in order to meet crosstalk specifications and ensure reliable operation of the system in all conditions of its 25 years lifetime. While very stable in the short-term, free-running DFB laser transmitters are expected to exhibit long-term wavelength drifts exceeding these requirements, leading to a need for practical wavelength monitoring and control. In this paper we describe a compact dither free wavelength stabilization method based on a Fabry-Perot (FP) filter. While the concept can be implemented in a stand-alone unit, its small footprint allows its incorporation into existing laser modules without increasing either real estate or dissipated power.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115279070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619180
L. Davis, M. Young, S. Forouhar
High bandwidth mode-locked laser arrays are being developed for a bit-parallel wavelength (BPW) link for high performance computer networks. The system design requires a 10 element WDM transmitter with an aggregate bandwidth in the 100-800 Gb/s range. The devices employ a colliding pulse mode-locked (CPM) cavity consisting of a 5 section, 3 contact symmetric cavity: a saturable absorber at the center of the cavity, 2 gain sections and 2 grating sections. The devices can operate as passively mode-locked lasers; however, in order to reduce the noise in the mode-locked laser and to synchronize the signals from all the lasers in the array, the contact to the saturable absorber section is designed for a G-S-G probe for application of a synchronizing RF signal.
{"title":"Mode-locked laser arrays for WDM applications","authors":"L. Davis, M. Young, S. Forouhar","doi":"10.1109/LEOSST.1997.619180","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619180","url":null,"abstract":"High bandwidth mode-locked laser arrays are being developed for a bit-parallel wavelength (BPW) link for high performance computer networks. The system design requires a 10 element WDM transmitter with an aggregate bandwidth in the 100-800 Gb/s range. The devices employ a colliding pulse mode-locked (CPM) cavity consisting of a 5 section, 3 contact symmetric cavity: a saturable absorber at the center of the cavity, 2 gain sections and 2 grating sections. The devices can operate as passively mode-locked lasers; however, in order to reduce the noise in the mode-locked laser and to synchronize the signals from all the lasers in the array, the contact to the saturable absorber section is designed for a G-S-G probe for application of a synchronizing RF signal.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115745252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619255
P. Hacke, H. Okushi
In this work, the deep level band structure of unintentionally doped n-type GaN grown by HVPE and MOVPE is demonstrated. Optical-isothermal capacitance transient spectroscopy (O-ICTS) is used to simultaneously observe thermal and optical emission processes from deep levels. The key benefit of this technique found when applied to GaN is that deep levels can be distinguished spectroscopically by their characteristic emission time constant. The O-ICTS spectra can be deconvoluted to estimate the concentrations and ionization energies of deep levels with a high degree of confidence.
{"title":"Characterization of mid-gap states in n-type GaN with optical-isothermal capacitance transient spectroscopy","authors":"P. Hacke, H. Okushi","doi":"10.1109/LEOSST.1997.619255","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619255","url":null,"abstract":"In this work, the deep level band structure of unintentionally doped n-type GaN grown by HVPE and MOVPE is demonstrated. Optical-isothermal capacitance transient spectroscopy (O-ICTS) is used to simultaneously observe thermal and optical emission processes from deep levels. The key benefit of this technique found when applied to GaN is that deep levels can be distinguished spectroscopically by their characteristic emission time constant. The O-ICTS spectra can be deconvoluted to estimate the concentrations and ionization energies of deep levels with a high degree of confidence.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116707654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619143
B. Lemoff, L. Aronson, L. Buckman, D. Dolfi
Summary form only given. This paper describes a compact transceiver module that achieves an aggregate data rate of 2.5 Gb/s over 500m and 4 Gb/s over 300m of 62MMF using 4 WDM wavelength channels each running at 622 Mb/s and 1 Gb/s respectively. We believe that the types of components used can be inexpensive enough for practical use in local area networks.
{"title":"Low-cost multimode WDM for the local area network","authors":"B. Lemoff, L. Aronson, L. Buckman, D. Dolfi","doi":"10.1109/LEOSST.1997.619143","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619143","url":null,"abstract":"Summary form only given. This paper describes a compact transceiver module that achieves an aggregate data rate of 2.5 Gb/s over 500m and 4 Gb/s over 300m of 62MMF using 4 WDM wavelength channels each running at 622 Mb/s and 1 Gb/s respectively. We believe that the types of components used can be inexpensive enough for practical use in local area networks.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125887983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619090
N. Rajkumar, J. McMullin, B. Keyworth
Future optical networks which employ wavelength division multiplexing (WDM) will require switches that are bit rate/code rate transparent, and allow spatial and wavelength reconfiguration of a channel. Optoelectronic cross-bar switches (OECBS) are able to perform all the required functionalities. In this paper we describe initial work on a free-space 4/spl times/4 OECBS which utilizes a 850 nm VCSEL array on 500 /spl mu/m centers as the optical sources within the switch. The signal-to-noise ratio (SNR) of the entire system for a 2 GHz bandwidth calculated from the measured data is 24.84 dB. The principal noise source is the receiver thermal noise (SNR/sub TH/=26.43 dB). The second dominant source of noise in the present system is the laser noise, both RIN (SNR/sub RIN/=31.98) and adjacent channel electrical cross-talk noise (SNR/sub ECN/=35 dB). By employing VCSELs with higher output powers and MSMs with better responsivity, it is possible to improve the S/N ratio to a level at which the laser noise would dominate, establishing a S/N ceiling. The S/N ceiling for the present system is estimated to be /spl sim/30 dB. If further improvements in the S/N is desired, VCSELs with lower intrinsic RIN and lower device crosstalk would be required.
{"title":"4/spl times/4 broadband optoelectronic switch using VCSELs","authors":"N. Rajkumar, J. McMullin, B. Keyworth","doi":"10.1109/LEOSST.1997.619090","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619090","url":null,"abstract":"Future optical networks which employ wavelength division multiplexing (WDM) will require switches that are bit rate/code rate transparent, and allow spatial and wavelength reconfiguration of a channel. Optoelectronic cross-bar switches (OECBS) are able to perform all the required functionalities. In this paper we describe initial work on a free-space 4/spl times/4 OECBS which utilizes a 850 nm VCSEL array on 500 /spl mu/m centers as the optical sources within the switch. The signal-to-noise ratio (SNR) of the entire system for a 2 GHz bandwidth calculated from the measured data is 24.84 dB. The principal noise source is the receiver thermal noise (SNR/sub TH/=26.43 dB). The second dominant source of noise in the present system is the laser noise, both RIN (SNR/sub RIN/=31.98) and adjacent channel electrical cross-talk noise (SNR/sub ECN/=35 dB). By employing VCSELs with higher output powers and MSMs with better responsivity, it is possible to improve the S/N ratio to a level at which the laser noise would dominate, establishing a S/N ceiling. The S/N ceiling for the present system is estimated to be /spl sim/30 dB. If further improvements in the S/N is desired, VCSELs with lower intrinsic RIN and lower device crosstalk would be required.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122622825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619155
S. Yoo, C. Caneau, R. Bhat, M. Koza, A. Rajhel, J. Ringo
Significant technological progress in wavelength conversion by difference-frequency-generation (DFG) has taken place since its conception for wavelength-division-multiplexing (WDM) network applications in 1991. This paper reviews progress in wavelength conversion by DFG in AlGaAs waveguides and discusses its implications for WDM network applications. The measured conversion efficiency versus the input wavelength is shown for two input polarizations. An extremely broad tuning curve is demonstrated with /spl sim/90 nm bandwidth and a polarization independent conversion process. Simultaneous conversion of 17 channels is also shown. Here, arbitrary input polarizations were used, and each channel achieves identical conversion efficiency. One of the important considerations for network applications is a requirement for an effective means to filter unwanted channels. One such method is based on polarization diversity, and a measured spectrum exploiting the unique polarization characteristics of the conversion process in an AlGaAs waveguide is also given.
{"title":"Progress in wavelength conversion by difference-frequency generation in AlGaAs waveguides","authors":"S. Yoo, C. Caneau, R. Bhat, M. Koza, A. Rajhel, J. Ringo","doi":"10.1109/LEOSST.1997.619155","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619155","url":null,"abstract":"Significant technological progress in wavelength conversion by difference-frequency-generation (DFG) has taken place since its conception for wavelength-division-multiplexing (WDM) network applications in 1991. This paper reviews progress in wavelength conversion by DFG in AlGaAs waveguides and discusses its implications for WDM network applications. The measured conversion efficiency versus the input wavelength is shown for two input polarizations. An extremely broad tuning curve is demonstrated with /spl sim/90 nm bandwidth and a polarization independent conversion process. Simultaneous conversion of 17 channels is also shown. Here, arbitrary input polarizations were used, and each channel achieves identical conversion efficiency. One of the important considerations for network applications is a requirement for an effective means to filter unwanted channels. One such method is based on polarization diversity, and a measured spectrum exploiting the unique polarization characteristics of the conversion process in an AlGaAs waveguide is also given.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122857817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619176
F. Xiang, G. Yip
Summary form only given. There has been growing interest in glass waveguide wavelength demultiplexers for applications in optical fiber communication systems. The device to be presented is shown to consist of two waveguide branches are made by K/sup +/-Na/sup +/ ion exchange with its arm 2 cladded by an Al/sub 2/O/sub 3/ layer. The demultiplexing is based on the difference in the dispersion characteristics of the two asymmetric branches. In a previous paper the difficulties were mainly with the deposition of a reliable Al/sub 2/O/sub 3/ layer. In this paper, we will present a much improved BPM design simulations, fabrication techniques and performance figures of this device.
{"title":"An asymmetric dielectric-strip loaded Y-junction wavelength demultiplexer by K/sup +/-Na/sup +/ ion exchange in glass","authors":"F. Xiang, G. Yip","doi":"10.1109/LEOSST.1997.619176","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619176","url":null,"abstract":"Summary form only given. There has been growing interest in glass waveguide wavelength demultiplexers for applications in optical fiber communication systems. The device to be presented is shown to consist of two waveguide branches are made by K/sup +/-Na/sup +/ ion exchange with its arm 2 cladded by an Al/sub 2/O/sub 3/ layer. The demultiplexing is based on the difference in the dispersion characteristics of the two asymmetric branches. In a previous paper the difficulties were mainly with the deposition of a reliable Al/sub 2/O/sub 3/ layer. In this paper, we will present a much improved BPM design simulations, fabrication techniques and performance figures of this device.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129579727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619244
S. Guha, N. Bojarczuk, R. Haight
The availability of small short wavelength III-N light sources have opened up new possibilities for applications involving color conversion. As a new application, we consider the hybrid organic-inorganic structure which consists of a GaN based LED emitting in the blue to uv coupled with an organic thin film with high fluorescence efficiency. Upon operation, the organic film absorbs the electroluminescence and emits in the green to red, resulting in color down conversion. Such a hybrid device is simple and has potential application as units for small full color pixelated displays for mobile applications. An array of identical GaN light emitters may be used as a substrate for deposition and patterning of appropriate emissive organic layers to form a full color display. Advantages over fully organic displays is that the electrical transport is confined to the robust GaN part, since organic films have poor electrical transport properties and degrade under electrical operation due to moisture. Advantages over fully semiconductor based displays is that different LEDs emitting different wavelengths do not have to be pieced together: the GaN LED is used as a skeleton to which an appropriate organic layer is simply added for the desired color. We demonstrate the operation of such hybrid LED units and discuss applicability for displays.
{"title":"Hybrid organic-inorganic GaN LED based color downconversion for displays","authors":"S. Guha, N. Bojarczuk, R. Haight","doi":"10.1109/LEOSST.1997.619244","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619244","url":null,"abstract":"The availability of small short wavelength III-N light sources have opened up new possibilities for applications involving color conversion. As a new application, we consider the hybrid organic-inorganic structure which consists of a GaN based LED emitting in the blue to uv coupled with an organic thin film with high fluorescence efficiency. Upon operation, the organic film absorbs the electroluminescence and emits in the green to red, resulting in color down conversion. Such a hybrid device is simple and has potential application as units for small full color pixelated displays for mobile applications. An array of identical GaN light emitters may be used as a substrate for deposition and patterning of appropriate emissive organic layers to form a full color display. Advantages over fully organic displays is that the electrical transport is confined to the robust GaN part, since organic films have poor electrical transport properties and degrade under electrical operation due to moisture. Advantages over fully semiconductor based displays is that different LEDs emitting different wavelengths do not have to be pieced together: the GaN LED is used as a skeleton to which an appropriate organic layer is simply added for the desired color. We demonstrate the operation of such hybrid LED units and discuss applicability for displays.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128274372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619134
Y. Chai, F. Choa
We report the analysis and results on an optically amplified WDM system with a cascade of optical amplifier-filter pairs. System performance is described by receiver electrical SNR (SNR/sub e/). The WDM system consists of m equally spaced optical channels and n stages of amplifier-filter pairs. In an ideal situation, each filter frequency is perfectly aligned with the laser frequency. The EDFA is assumed to operate with a constant total output power model. Two cases are considered. One is the "worst case" where all filters have a drift of /spl Delta/f, the other is the "best" case where only one filter suffers a drift of /spl Delta/f. For both cases, the system analyzed has eight 2.5 Gb/s.
{"title":"Effects of optical filter drifts in wavelength division multiplexing system with cascaded optical amplifiers","authors":"Y. Chai, F. Choa","doi":"10.1109/LEOSST.1997.619134","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619134","url":null,"abstract":"We report the analysis and results on an optically amplified WDM system with a cascade of optical amplifier-filter pairs. System performance is described by receiver electrical SNR (SNR/sub e/). The WDM system consists of m equally spaced optical channels and n stages of amplifier-filter pairs. In an ideal situation, each filter frequency is perfectly aligned with the laser frequency. The EDFA is assumed to operate with a constant total output power model. Two cases are considered. One is the \"worst case\" where all filters have a drift of /spl Delta/f, the other is the \"best\" case where only one filter suffers a drift of /spl Delta/f. For both cases, the system analyzed has eight 2.5 Gb/s.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128709118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619078
R. Morgan
The recent commercialization of VCSELs has opened up the possibility of VCSELs in numerous evolving technologies. Many of the present application include optical links, LED and CD replacements in printing, storage, duplication, and sensors. As VCSEL components have exhibited "silicon-like" manufacturability, the ubiquity of VCSEL-based optoelectronic circuits appears bright. VCSEL-array-based smart pixel processors have the potential to enable ultrafast interconnect-intensive processors. VCSELs and VCSEL arrays appear promising between, and even within, computers, backplanes, and multichip modules (MCMs). Tke possibility of RF-VCSELs is speculated. Beyond present "commercial-grade" development, there have been a number of exciting research advancements in decreasing the threshold currents and speed of VCSELs. This may enable even lower power dissipation, higher speeds, and extensions to arrays, and expedite extensions to other spectral regions.
{"title":"VCSEL research, development and applications at Honeywell","authors":"R. Morgan","doi":"10.1109/LEOSST.1997.619078","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619078","url":null,"abstract":"The recent commercialization of VCSELs has opened up the possibility of VCSELs in numerous evolving technologies. Many of the present application include optical links, LED and CD replacements in printing, storage, duplication, and sensors. As VCSEL components have exhibited \"silicon-like\" manufacturability, the ubiquity of VCSEL-based optoelectronic circuits appears bright. VCSEL-array-based smart pixel processors have the potential to enable ultrafast interconnect-intensive processors. VCSELs and VCSEL arrays appear promising between, and even within, computers, backplanes, and multichip modules (MCMs). Tke possibility of RF-VCSELs is speculated. Beyond present \"commercial-grade\" development, there have been a number of exciting research advancements in decreasing the threshold currents and speed of VCSELs. This may enable even lower power dissipation, higher speeds, and extensions to arrays, and expedite extensions to other spectral regions.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129276000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
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