Skin Effect Analysis and Comparison for Carbon-Based Interconnects at 5nm Technology Node

S. Hamedani, M. H. Moaiyeri
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Abstract

The impacts of skin effects on the performance of carbon-based interconnects have been analyzed and compared at the 5 nm technology node in this paper. According to the results, in the range of 20 GHz frequency, the skin depths of multilayer graphene nanoribbon (MLGNR) global interconnects are on average 52% greater than multiwall carbon nanotube (MWCNT) wires at 5nm technology node. Our simulations demonstrate that in the presence of skin effect at high frequencies, MLGNR interconnects lead to lower delay and power consumption than their MWCNT counterparts. According to the results, the delays of MLGNR interconnects are, on average, 46% lower than those of MWCNTs at the 5 nm technology node. Moreover, power consumptions of MLGNR are, on average, 3% lower than MWCNT in the presence of skin effects. Additionally, the results of time domain analysis show that the noise amplitude at the end of the MLGNR victim line is smaller than that of the MWCNT interconnect at 10GHz frequency.
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5nm工艺节点碳基互连的趋肤效应分析与比较
本文在5nm技术节点上分析比较了集肤效应对碳基互连性能的影响。结果表明,在20 GHz频率范围内,多层石墨烯纳米带(MLGNR)全球互连在5nm技术节点上的集肤深度比多壁碳纳米管(MWCNT)线平均高52%。我们的模拟表明,在高频存在集肤效应的情况下,MLGNR互连比MWCNT互连具有更低的延迟和功耗。结果表明,在5nm技术节点上,MLGNR互连的延迟平均比MWCNTs低46%。此外,在存在集肤效应的情况下,MLGNR的功耗平均比MWCNT低3%。此外,时域分析结果表明,在10GHz频率下,MLGNR受害线末端的噪声幅值小于MWCNT互连的噪声幅值。
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