{"title":"A Novel Fast Power-Efficient Cascode Level-Shifter","authors":"A. Zanjani, M. Jalali","doi":"10.1109/IICM57986.2022.10152311","DOIUrl":null,"url":null,"abstract":"The Voltage scaling technique is widely used in recent digital systems to resolve power issues. In these systems, Level Shifters (LS) are essential to make a solid interface between different voltage domains. This article presents a fast power and area-efficient ultra-low voltage level shifter (LS) that facilitates a wide range of conversion from the deep sub-threshold region up to the super-threshold region. The proposed LS achieves better performance by combining cross-coupled and current mirror-based structures' advantages. In addition, the split-input inverter and current limiter techniques help to reduce static power efficiently. Assuming a conversion from 400 mV to 1.2 V at 1MHz frequency, simulation results show that compared to the prior work, the proposed LS consumes 66% less power while performing the conversion about 13% faster. Implemented in a 65 nm standard CMOS process, the proposed SA consists of 9 transistors and occupies approximately 6.1 um x 18.2 um of silicon area.","PeriodicalId":131546,"journal":{"name":"2022 Iranian International Conference on Microelectronics (IICM)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Iranian International Conference on Microelectronics (IICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IICM57986.2022.10152311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The Voltage scaling technique is widely used in recent digital systems to resolve power issues. In these systems, Level Shifters (LS) are essential to make a solid interface between different voltage domains. This article presents a fast power and area-efficient ultra-low voltage level shifter (LS) that facilitates a wide range of conversion from the deep sub-threshold region up to the super-threshold region. The proposed LS achieves better performance by combining cross-coupled and current mirror-based structures' advantages. In addition, the split-input inverter and current limiter techniques help to reduce static power efficiently. Assuming a conversion from 400 mV to 1.2 V at 1MHz frequency, simulation results show that compared to the prior work, the proposed LS consumes 66% less power while performing the conversion about 13% faster. Implemented in a 65 nm standard CMOS process, the proposed SA consists of 9 transistors and occupies approximately 6.1 um x 18.2 um of silicon area.
电压标度技术被广泛应用于数字系统中以解决功率问题。在这些系统中,电平移位器(LS)对于在不同电压域之间建立坚实的界面是必不可少的。本文提出了一种快速功率和面积高效的超低电压电平移位器(LS),它有助于从深亚阈值区域到超阈值区域的大范围转换。结合交叉耦合和电流镜结构的优点,本文提出的LS具有更好的性能。此外,分输入逆变器和限流器技术有助于有效地降低静态功率。假设在1MHz频率下从400 mV转换为1.2 V,仿真结果表明,与之前的工作相比,所提出的LS的功耗降低了66%,转换速度提高了13%左右。在65nm标准CMOS工艺中实现,所提出的SA由9个晶体管组成,占地约6.1 um x 18.2 um的硅面积。