GaN based Driver and Power Amplifier MMICs for X-Band Transceiver Modules

2019 IEEE 19th Mediterranean Microwave Symposium (MMS) Pub Date : 2019-10-01 DOI:10.1109/mms48040.2019.9157248

Büşra Çankaya Akoğlu, Batuhan Sutbas, O. Cengiz, E. Ozbay

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引用次数: 2

Abstract

This work presents the design and implementation of two power amplifiers along with a driver amplifier based on our in-house microstrip 0.25 μm GaN on SiC technology. Details of the fabrication technology, typical transistor performance, MMIC design procedure, and measurement results of the fabricated chips are provided. The presented amplifier chain is planned to be used in an X-band transceiver module. The compact size driver amplifier demonstrates at least 25 dB gain and has a minimum of 23 dBm output power at 1 dB gain compression, which is sufficient to drive the power amplifier MMICs comfortably. For the power amplifiers, two design approaches are taken. The first design provides a maximum output power of 20 W with 27 dB power gain at the center frequency of 10 GHz, while the second one is optimized for flatter small-signal and large-signal responses. The second power amplifier achieves at least 17.6 W across the desired band with a minimum of 33% power-added efficiency and also provides 35.2 dB small-signal gain with a considerably low gain ripple of 0.8 dB. The complete amplifier chain is expected to demonstrate a high gain and high output power density with low ripple at 85°C operating temperature.

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基于GaN的x波段收发模块驱动和功率放大器mmic

本文介绍了基于我们内部0.25 μm GaN on SiC微带技术的两个功率放大器和一个驱动放大器的设计和实现。详细介绍了该芯片的制造工艺、典型晶体管性能、MMIC设计过程和测试结果。提出的放大器链计划用于x波段收发模块。紧凑尺寸的驱动放大器具有至少25 dB的增益，并且在1 dB增益压缩时具有至少23 dBm的输出功率，足以舒适地驱动功率放大器mmic。对于功率放大器，采用了两种设计方法。第一种设计在中心频率为10 GHz时提供20 W的最大输出功率和27 dB的功率增益，而第二种设计则针对更平坦的小信号和大信号响应进行了优化。第二个功率放大器在期望的频带上实现至少17.6 W，功率增加效率至少为33%，还提供35.2 dB小信号增益，增益纹波相当低，为0.8 dB。整个放大器链有望在85°C工作温度下表现出高增益和低纹波的高输出功率密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE 19th Mediterranean Microwave Symposium (MMS)

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