A low-power RISC microprocessor using dual PLLs in a 0.13 /spl mu/m SOI technology with copper interconnect and low-k BEOL dielectric

S. Geissler, D. Appenzeller, E. Cohen, S. Charlebois, P. Kartschoke, P. McCormick, N. Rohrer, G. Salem, P. Sandon, B. Singer, T. von Reyn, J. Zimmerman
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引用次数: 27

Abstract

Microprocessors achieving clock frequencies >1 GHz for mobile applications require solutions to maintain long battery life. Circuit and architecture solutions for dynamic frequency switching between multiple PLLs, DC power reduction methods, and impact of low-k dielectric on timing and power are discussed.
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采用双锁相环的低功耗RISC微处理器,采用0.13 /spl mu/m SOI技术,采用铜互连和低k BEOL介电
为移动应用实现时钟频率> 1ghz的微处理器需要解决方案来保持较长的电池寿命。讨论了多个锁相环之间动态频率切换的电路和架构解决方案、直流功率降低方法以及低k介电对时序和功率的影响。
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Implementation of a third-generation 1.1GHz 64b microprocessor A 0.9 V to 1.95 V dynamic voltage-scalable and frequency-scalable 32 b PowerPC processor A highly-integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability A low-power RISC microprocessor using dual PLLs in a 0.13 /spl mu/m SOI technology with copper interconnect and low-k BEOL dielectric A 27 mW GPS radio in 0.35 /spl mu/m CMOS
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