Defining the performance of SiOx ReRAM by engineering oxide microstructure

Abstract

Filamentary resistance switching, or ReRAM, devices based on oxides suffer from device-do-device and cycle-to-cycle variability of electrical characteristics (electroforming voltages, set and reset voltages, resistance levels and cycling endurance). These are largely materials issues related to the microstructure of the switching oxide. Here we outline strategies to engineer the electrical performance of silicon oxide ReRAM by controlling the oxide microstructure at the nanometre scale through approaches including engineered interfaces and ion implantation. We demonstrate control over the distribution of switching voltages, electroforming voltages, and stable multilevel resistance states.