Forced chaos generator with switched CMOS active inductance

Yusuke Tsubaki, Y. Horio, K. Aihara
{"title":"Forced chaos generator with switched CMOS active inductance","authors":"Yusuke Tsubaki, Y. Horio, K. Aihara","doi":"10.1109/ECCTD.2011.6043624","DOIUrl":null,"url":null,"abstract":"We propose a forced chaos generator with a CMOS variable active inductor circuit. Two values of the equivalent inductance of the active inductor in the proposed circuit are switched by an external periodic square-wave voltage, so that a stretching-and-folding mechanism of chaotic motion is realized. The chaotic dynamics are confirmed through SPICE simulations with TSMC 0.35 µm CMOS semiconductor process parameters. Moreover, we present bifurcation phenomena, which are generated when the amplitude and the period of the external signal are changed as bifurcation parameters. A prototype chip for the proposed circuit was designed and fabricated with TSMC 0.25 µm CMOS semiconductor process.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We propose a forced chaos generator with a CMOS variable active inductor circuit. Two values of the equivalent inductance of the active inductor in the proposed circuit are switched by an external periodic square-wave voltage, so that a stretching-and-folding mechanism of chaotic motion is realized. The chaotic dynamics are confirmed through SPICE simulations with TSMC 0.35 µm CMOS semiconductor process parameters. Moreover, we present bifurcation phenomena, which are generated when the amplitude and the period of the external signal are changed as bifurcation parameters. A prototype chip for the proposed circuit was designed and fabricated with TSMC 0.25 µm CMOS semiconductor process.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
具有开关CMOS有源电感的强制混沌发生器
我们提出了一种带有CMOS可变有源电感电路的强制混沌发生器。该电路中有源电感等效电感的两个值通过外部周期方波电压进行切换,从而实现混沌运动的拉伸-折叠机制。采用台积电0.35µm CMOS工艺参数进行SPICE仿真,验证了混沌动力学特性。此外,我们还提出了当外部信号的振幅和周期作为分岔参数改变时产生的分岔现象。采用台积电0.25µm CMOS工艺设计并制作了该电路的原型芯片。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Decade bandwidth single and cascaded travelling wave medium power amplifiers using sige hbts Hilbert transform by divide-and-conquer piecewise linear approximation Analysis and design of an array of two differential oscillators coupled through a resistive network Impact of NMOS/PMOS imbalance in Ultra-Low Voltage CMOS standard cells Utilization of distortion contribution analysis
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1