Analysis of carbon nanotube interconnects and their comparison with Cu interconnects

N. Alam, A. K. Kureshi, M. Hasan, T. Arslan
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引用次数: 15

Abstract

The carbon nanotube (CNT) bundles have potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper interconnects in very deep submicron (VDSM) technology. This paper presents a comprehensive analysis of mixed bundles of CNTs and compares various transmission line model interconnect parameters (R, L, & C) with that of the Cu interconnects at 32nm technology node. Results show that the mixed bundles of CNTs have smaller value of R & C for Intermediate and Global level interconnects. However, for Local interconnects Cu wire has smaller value of R and the value of C is comparable to that of the bundle of CNTs.
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碳纳米管互连的分析及其与铜互连的比较
碳纳米管(CNT)束有潜力为传统铜互连在甚深亚微米(VDSM)技术中面临的电阻率和电迁移问题提供有吸引力的解决方案。本文对混合CNTs束进行了全面分析,并将各种传输线模型互连参数(R、L、C)与32nm技术节点的Cu互连参数进行了比较。结果表明,混合CNTs束在中间和全局级互连中具有较小的R和C值。而对于Local互连,Cu导线的R值较小,C值与CNTs束相当。
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