A Mixer-First Receiver Frontend with Resistive-Feedback Baseband Achieving 200 MHz IF Bandwidth in 65 nm CMOS

Benqing Guo, Haishi Wang, Yao Wang, Kenneth K. Li, Lei Li, Wanting Zhou
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引用次数: 6

Abstract

A mixer-first receiver frontend with resistive-feedback baseband is proposed. The baseband combination of Gm and transimpedance amplifier (TIA) is designed to cover a wide frequency range for high data rate applications. The N-path filtering at the RF side and enhanced filtering at the BB side inhibit out-of-band blocker interferences. The receiver is fabricated in a 65 nm CMOS. Measurement results display an NF of 2.3 dB and a conversion gain of 33.5 dB at 2 GHz fLO. The in-band and out-of-band IIP3 are −7.5 dBm and 19 dBm respectively. The receiver core draws 34 mW in the signal path and occupies an active area of 0.31 mm2.
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在65nm CMOS中实现200mhz中频带宽的阻性反馈基带混合器优先接收器前端
提出了一种带阻性反馈基带的混合器优先接收器前端。Gm和跨阻放大器(TIA)的基带组合设计用于覆盖高数据速率应用的宽频率范围。射频侧的n路滤波和BB侧的增强滤波抑制带外阻断器干扰。该接收器采用65nm CMOS工艺制造。测量结果显示,在2ghz fLO下,NF为2.3 dB,转换增益为33.5 dB。带内IIP3为−7.5 dBm,带外IIP3为19 dBm。接收器核心在信号路径中吸收34 mW,占用0.31 mm2的有效面积。
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