{"title":"Analytical model for quantum well to quantum dot tunneling","authors":"R. Clerc, G. Ghibaudo, G. Pananakakis","doi":"10.1109/ESSDERC.2003.1256913","DOIUrl":null,"url":null,"abstract":"This paper presents an analytical model of elastic tunneling from a quantum well to a quantum dot, applicable to the modeling of single electron transistor and memory charging. The main differences between tunneling to a quantum dot and to a continuum of states have been carefully addressed. The impact of quantum decoherence factors such as temperature and dot size dispersion have also been investigated.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents an analytical model of elastic tunneling from a quantum well to a quantum dot, applicable to the modeling of single electron transistor and memory charging. The main differences between tunneling to a quantum dot and to a continuum of states have been carefully addressed. The impact of quantum decoherence factors such as temperature and dot size dispersion have also been investigated.
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