Synchronization of pulsed and continuous-wave IMPATT oscillators in the millimeter wavelength range. Part 2. Stabilizing microwave parameters of synchronized generators

M. F. Karushkin
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Abstract

This is the second part of the two-part article, which summarizes the state-of-the-art results in the development of synchronized oscillators based on IMPATT (IMPact ionization Avalanche Transit-Time) diodes. The first part of the paper presented the electrodynamic design of oscillators, which contain a resonant oscillatory system with silicon IMPATT diodes and are synchronized by an external source of microwave oscillations. The second part of the paper considers the methods for stabilizing the parameters of IMPATT oscillators, which make it possible to create coherent power sources in the millimeter wavelength range. The specifics of pulse generators lies in the change in frequency within the microwave pulse relative to the change in temperature, which leads to a change in the impedance of the diode and thus to a phase change with respect to the synchronizing signal. Phase modulation is reduced or completely eliminated (which is necessary to ensure the coherence of the microwave transmitter) by using current compensation, i.e., by using the control current pulse with a special shape. The study demonstrates the expediency of introducing additional heating of the semiconductor structure of the IMPATT diode, which allows the initial temperature of the IMPATT diode in the region of the leading edge of each pulse to remain virtually constant and independent of the ambient temperature. Using these methods on silicon double-drift IMPATT diodes allowed creating synchronized oscillators with high frequency stability and an output power level from 20 to 150 W, which have a high degree of coherence in the synchronization mode with an external signal. The paper also presents the designs and parameters of coherent microwave power sources in the short-wave part of the millimeter wavelength range using the nonlinear properties of the IMPATT diodes in the radio-pulse conversion mode. This mode makes it possible to provide the output power level of the signal at the n-th harmonic Pout ≈1/n, which significantly exceeds the achieved characteristics of the frequency multipliers with charge accumulation, where Pout ≈ 1/n2. The output power of such devices is achieved at the level of 50–20 mW in the 75–180 GHz frequency range with a frequency multiplication factor of 1–15.
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毫米波范围内脉冲和连续波IMPATT振荡器的同步。第2部分。稳定同步发电机微波参数
这是由两部分组成的文章的第二部分,该文章总结了基于IMPATT(冲击电离雪崩跃迁时间)二极管的同步振荡器开发的最新成果。本文的第一部分介绍了振荡器的电动力学设计,该振荡器包含一个由硅IMPATT二极管组成的谐振振荡系统,并由外部微波振荡源同步。论文的第二部分考虑了稳定IMPATT振荡器参数的方法,这使得在毫米波长的范围内创建相干电源成为可能。脉冲发生器的特点在于微波脉冲内频率的变化相对于温度的变化,这会导致二极管阻抗的变化,从而导致相对于同步信号的相位变化。通过电流补偿,即使用具有特殊形状的控制电流脉冲,可以减少或完全消除相位调制(这是保证微波发射机相干性所必需的)。该研究证明了在IMPATT二极管的半导体结构中引入额外加热的便利性,这使得IMPATT二极管在每个脉冲前缘区域的初始温度几乎保持恒定,并且与环境温度无关。在硅双漂移IMPATT二极管上使用这些方法,可以创建具有高频率稳定性和输出功率水平从20到150 W的同步振荡器,在与外部信号同步模式下具有高度相干性。本文还利用IMPATT二极管在射电脉冲转换模式下的非线性特性,提出了毫米波短波段相干微波功率源的设计和参数。这种模式使得提供n次谐波Pout≈1/n的信号输出功率水平成为可能,这大大超过了带电荷积累的倍频器的特性,其中Pout≈1/ n2。在75-180 GHz频率范围内,该器件的输出功率达到50-20 mW,倍频系数为1-15。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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