Pub Date : 2019-08-01DOI: 10.15222/tkea2019.3-4.19
A. Ivanchenko, A. Tonkoshkur
Recently, much attention has been paid to the study of the influence of current overloads and local overheating on the degradation of the electrical characteristics of the photovoltaic components of solar arrays. First of all, it is connected with the tasks of increasing the reliability and durability of the operation of such renewable sources of electrical energy. Such studies are of particular interest due to the recent emergence of new methods and devices for improving the reliability of solar arrays by isolating inactive (defective or shaded) areas of their photovoltaic components (photovoltaic cells and photovoltaic modules). This paper presents the research results on the influence of current overloads on the current-voltage and volt-watt characteristics and the electrical parameters of photovoltaic cells of solar arrays based on monocrystalline silicon. The testing was performed using the cyclic current overload mode, which is the flow of electric breakdown current passed through the back-turned diode of a photovoltaic cell for several seconds. After that, the photovoltaic cell was cooled to room temperature, and then its current-voltage and volt-watt characteristics were measured. The degradation (decrease) of all the basic electrical parameters of photovoltaic cells (open-circuit voltage, short-circuit current, filling factor of the current-voltage characteristic, and maximum power) has been established. The additive nature of the changes and the average relative decrease of the indicated electrical parameters for one breakdown cycle are determined. Comparison of the response time range of the PolySwitch fuses with the breakdown durations of photovoltaic cells is performed. The conclusion is drawn about the prospect of using such resettable fuses as protection in emergency situations that are associated with current overloads in solar arrays.
{"title":"Changes in the characteristics of silicon photovoltaic cells of solar arrays after current overloads","authors":"A. Ivanchenko, A. Tonkoshkur","doi":"10.15222/tkea2019.3-4.19","DOIUrl":"https://doi.org/10.15222/tkea2019.3-4.19","url":null,"abstract":"Recently, much attention has been paid to the study of the influence of current overloads and local overheating on the degradation of the electrical characteristics of the photovoltaic components of solar arrays. First of all, it is connected with the tasks of increasing the reliability and durability of the operation of such renewable sources of electrical energy. Such studies are of particular interest due to the recent emergence of new methods and devices for improving the reliability of solar arrays by isolating inactive (defective or shaded) areas of their photovoltaic components (photovoltaic cells and photovoltaic modules).\u0000This paper presents the research results on the influence of current overloads on the current-voltage and volt-watt characteristics and the electrical parameters of photovoltaic cells of solar arrays based on monocrystalline silicon.\u0000The testing was performed using the cyclic current overload mode, which is the flow of electric breakdown current passed through the back-turned diode of a photovoltaic cell for several seconds. After that, the photovoltaic cell was cooled to room temperature, and then its current-voltage and volt-watt characteristics were measured.\u0000The degradation (decrease) of all the basic electrical parameters of photovoltaic cells (open-circuit voltage, short-circuit current, filling factor of the current-voltage characteristic, and maximum power) has been established. The additive nature of the changes and the average relative decrease of the indicated electrical parameters for one breakdown cycle are determined. Comparison of the response time range of the PolySwitch fuses with the breakdown durations of photovoltaic cells is performed. The conclusion is drawn about the prospect of using such resettable fuses as protection in emergency situations that are associated with current overloads in solar arrays.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131865530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.1-3.44
A. Pudov, S. Sokolov, A. S. Abyzov, A. Rybka, V. Kutny
Gas-filled proportional detectors of ionizing radiation often contain such elements as thin anode wire, which make them sensitive to external acoustic or vibrational impact. This study investigates such sensitivity for the case of the proportional -radiation detectors filled with high-purity xenon gas. The detector demonstrates a dependence of its signal noise on the external acoustic wave frequency, the character of which most likely depends on the design of the detector, i.e. on such parameters as diameter and tension strength of the anode wire, etc. To suppress the negative impact of acoustic noise on the characteristics of the detector, the detector digital signal is processed in a Field-Programmable Gate Array board. The authors investigate the algorithm of «time windows», which allows separating (filtering) low-frequency noise in the output signal of a gas-filled detector, which arises due to the influence of external sound, from the useful signal, i.e. the ionization pulses. This approach allows performing spectral measurements of -radiation with a significant acoustic noise background, when detectors with a conventional analog spectrometric channel cannot handle the task.
{"title":"Digital FPGA-based processing of pulses of gas-filled gamma-radiation detector for acoustic noise suppression","authors":"A. Pudov, S. Sokolov, A. S. Abyzov, A. Rybka, V. Kutny","doi":"10.15222/tkea2022.1-3.44","DOIUrl":"https://doi.org/10.15222/tkea2022.1-3.44","url":null,"abstract":"Gas-filled proportional detectors of ionizing radiation often contain such elements as thin anode wire, which make them sensitive to external acoustic or vibrational impact. This study investigates such sensitivity for the case of the proportional -radiation detectors filled with high-purity xenon gas. The detector demonstrates a dependence of its signal noise on the external acoustic wave frequency, the character of which most likely depends on the design of the detector, i.e. on such parameters as diameter and tension strength of the anode wire, etc. To suppress the negative impact of acoustic noise on the characteristics of the detector, the detector digital signal is processed in a Field-Programmable Gate Array board. The authors investigate the algorithm of «time windows», which allows separating (filtering) low-frequency noise in the output signal of a gas-filled detector, which arises due to the influence of external sound, from the useful signal, i.e. the ionization pulses. This approach allows performing spectral measurements of -radiation with a significant acoustic noise background, when detectors with a conventional analog spectrometric channel cannot handle the task.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124829618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.5-6.03
A. S. Pavluchenko, A. Kukla
This paper is a continuation of the previously published work by the same authors, where general principles of the ionometric transducer design utilizing solid-state ion-sensitive electrodes (ion-sensitive field effect transistors, ISFETs) that can simultaneously serve as temperature sensors were laid out. In that part of the work, a possibility of using such transducer as a basis for ionometric device that performs automatic compensation of the temperature dependence of electrode potential without the need for a dedicated thermometric measuring path in the device structure was demonstrated with the circuit simulation results. Combination of the two functions (ionometric and thermometric) in a single sensor is achieved by separating the sensor operation modes in time, and dynamically switching between them by controlling the ISFET bias voltage. In the present part, a practical implementation of the secondary transducer for ionometric sensors based on ISFET is considered and described. The proposed transducer provides the possibility of programmatic control of the ISFET bias voltage magnitude and polarity, thus allowing to use the ISFET as a temperature sensor. Consecutive switching between ionometric and thermometric modes of sensor operation, along with subsequent algorithmic processing of the obtained data by a microprocessor incorporated into the transducer structure, allows to compensate the temperature dependence of the ISFET electrode potential. Circuit diagrams for the main components of transducer — namely, the programmable voltage source for ISFET biasing and the transimpedance amplifier for the sensor output readout — are presented, as well as the experimental estimation of the ISFET sensor thermometric properties and the efficiency of thermocompensation.
{"title":"Quasi-synchronous thermocompensation for ISFET-based ionometric devices. Part 2: Implementation","authors":"A. S. Pavluchenko, A. Kukla","doi":"10.15222/tkea2021.5-6.03","DOIUrl":"https://doi.org/10.15222/tkea2021.5-6.03","url":null,"abstract":"This paper is a continuation of the previously published work by the same authors, where general principles of the ionometric transducer design utilizing solid-state ion-sensitive electrodes (ion-sensitive field effect transistors, ISFETs) that can simultaneously serve as temperature sensors were laid out. In that part of the work, a possibility of using such transducer as a basis for ionometric device that performs automatic compensation of the temperature dependence of electrode potential without the need for a dedicated thermometric measuring path in the device structure was demonstrated with the circuit simulation results. Combination of the two functions (ionometric and thermometric) in a single sensor is achieved by separating the sensor operation modes in time, and dynamically switching between them by controlling the ISFET bias voltage. \u0000In the present part, a practical implementation of the secondary transducer for ionometric sensors based on ISFET is considered and described. The proposed transducer provides the possibility of programmatic control of the ISFET bias voltage magnitude and polarity, thus allowing to use the ISFET as a temperature sensor. Consecutive switching between ionometric and thermometric modes of sensor operation, along with subsequent algorithmic processing of the obtained data by a microprocessor incorporated into the transducer structure, allows to compensate the temperature dependence of the ISFET electrode potential. Circuit diagrams for the main components of transducer — namely, the programmable voltage source for ISFET biasing and the transimpedance amplifier for the sensor output readout — are presented, as well as the experimental estimation of the ISFET sensor thermometric properties and the efficiency of thermocompensation.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128580075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.3-4.47
V. Kravets, R. Melnyk, A. A. Chervoniuk, Ye. V. Shevel
The paper presents the experimental results on the permeability of metal felt capillary-porous structures with a fiber diameter of 10—50 μm at porosity values from 57% to 90% when the fluid filtration occurs along the felt plane. It is determined that the permeability depends on the geometric parameters of the capillary structure (fiber diameter), porosity and direction of fluid filtration. In previous permeability studies, no attention was paid to the direction of fluid movement in the capillary structure. It was believed that the metal felt structure is isotropic and the permeability was studied for cross-fiber filtration. In reality, unlike regular capillary structures (powder), metal felt structures are anisotropic and their characteristics depend on the direction of fluid filtration. In heat pipes, the capillary structure fibers are mostly positioned parallel to the axis of the pipe, and thus the fluid moves from the condensation zone to the evaporation zone along the fibers. It was shown that at a porosity of 55—70%, the value of permeability does not depend on the direction of filtration. In the porosity range from 70% to 90%, error can exceed 50%. In this porosity range, the permeability value at cross-fiber filtration significantly exceeds the permeability value at longitudinal filtration. This proves that the calculation relations for determining the permeability coefficients of metal felt capillary-porous structures obtained for cross-fiber filtration cannot be used to calculate heat pipes. Analyzing the results and processing the obtained experimental data allowed proposing an empirical dependence that generalizes the data with an error of up to 20% in the whole range of the studied porosity values. The research results can be used to design heat pipes with maximum heat transfer characteristics for cooling electronics.
{"title":"Investigating permeability of metal felt capillary structures of heat pipes for cooling electronics","authors":"V. Kravets, R. Melnyk, A. A. Chervoniuk, Ye. V. Shevel","doi":"10.15222/tkea2020.3-4.47","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.47","url":null,"abstract":"The paper presents the experimental results on the permeability of metal felt capillary-porous structures with a fiber diameter of 10—50 μm at porosity values from 57% to 90% when the fluid filtration occurs along the felt plane. It is determined that the permeability depends on the geometric parameters of the capillary structure (fiber diameter), porosity and direction of fluid filtration. In previous permeability studies, no attention was paid to the direction of fluid movement in the capillary structure. It was believed that the metal felt structure is isotropic and the permeability was studied for cross-fiber filtration. In reality, unlike regular capillary structures (powder), metal felt structures are anisotropic and their characteristics depend on the direction of fluid filtration. In heat pipes, the capillary structure fibers are mostly positioned parallel to the axis of the pipe, and thus the fluid moves from the condensation zone to the evaporation zone along the fibers.\u0000It was shown that at a porosity of 55—70%, the value of permeability does not depend on the direction of filtration. In the porosity range from 70% to 90%, error can exceed 50%. In this porosity range, the permeability value at cross-fiber filtration significantly exceeds the permeability value at longitudinal filtration.\u0000This proves that the calculation relations for determining the permeability coefficients of metal felt capillary-porous structures obtained for cross-fiber filtration cannot be used to calculate heat pipes.\u0000Analyzing the results and processing the obtained experimental data allowed proposing an empirical dependence that generalizes the data with an error of up to 20% in the whole range of the studied porosity values.\u0000The research results can be used to design heat pipes with maximum heat transfer characteristics for cooling electronics.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129489359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2019.5-6.34
D. Pekur, Yu. E. Nikolaenko, V. Sorokin
The problem of climate change poses a challenge for humanity: it is necessary to reduce harmful emissions into the atmosphere, caused mainly by the burning of coal in thermal power plants. Partially, this problem can be solved by the use of energy-saving devices and equipment, including the replacement of traditional light sources with more efficient LEDs. This, however, causes the problem of ensuring normal thermal modes of the LEDs, since the more powerfull the LED is, the more heat is released in their semiconductor crystals, which leads to an increase in the temperature of the crystals and a decrease in the reliability of the device. This problem becomes especially urgent when using powerful multi-chip LED light sources, the so-called SOB matrices, whose power even now exceeds 500 W. This article presents a new design of a powerful LED lamp for indoor illumination of rooms with low ceilings. The heat from the LED is transferred via heat pipes to the heat exchanger rings looped around the light source. The heat exchanger rings are cooled by the natural convection of the surrounding air (at an ambient air temperature of 20°C). Computer simulation allowed evaluating the ability of the proposed cooling system to provide a normal thermal mode of the LED light source. The results on the computer simulations of the temperature field of light source`s cooling system showed that when the LED power is 300 W, the temperature of the light source`s base at the point where it is connected to the light source does not exceed 67.6°C. When the contact zone is covered with a 0.1 mm layer of heat-conducting paste (Arctiс Silver 5 type) with a thermal conductivity coefficient of 8.7 W/(m•°C), the temperature of the LED case reaches 70°C. If the thermal resistance of the LED light source is 0.1°C/W, then the temperature of its semiconductor crystals will be 100°C, well below the allowable temperature value of 150°C. The total thermal resistance of the cooling system is 0.159°C/W.
{"title":"New LED lamp design with heat pipes","authors":"D. Pekur, Yu. E. Nikolaenko, V. Sorokin","doi":"10.15222/tkea2019.5-6.34","DOIUrl":"https://doi.org/10.15222/tkea2019.5-6.34","url":null,"abstract":"The problem of climate change poses a challenge for humanity: it is necessary to reduce harmful emissions into the atmosphere, caused mainly by the burning of coal in thermal power plants. Partially, this problem can be solved by the use of energy-saving devices and equipment, including the replacement of traditional light sources with more efficient LEDs. This, however, causes the problem of ensuring normal thermal modes of the LEDs, since the more powerfull the LED is, the more heat is released in their semiconductor crystals, which leads to an increase in the temperature of the crystals and a decrease in the reliability of the device. This problem becomes especially urgent when using powerful multi-chip LED light sources, the so-called SOB matrices, whose power even now exceeds 500 W.\u0000This article presents a new design of a powerful LED lamp for indoor illumination of rooms with low ceilings. The heat from the LED is transferred via heat pipes to the heat exchanger rings looped around the light source. The heat exchanger rings are cooled by the natural convection of the surrounding air (at an ambient air temperature of 20°C). Computer simulation allowed evaluating the ability of the proposed cooling system to provide a normal thermal mode of the LED light source. The results on the computer simulations of the temperature field of light source`s cooling system showed that when the LED power is 300 W, the temperature of the light source`s base at the point where it is connected to the light source does not exceed 67.6°C. When the contact zone is covered with a 0.1 mm layer of heat-conducting paste (Arctiс Silver 5 type) with a thermal conductivity coefficient of 8.7 W/(m•°C), the temperature of the LED case reaches 70°C. If the thermal resistance of the LED light source is 0.1°C/W, then the temperature of its semiconductor crystals will be 100°C, well below the allowable temperature value of 150°C. The total thermal resistance of the cooling system is 0.159°C/W.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124004368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.4-6.59
P. Gorskyi
The study compares reliability indicators of thermoelectric generator modules using the nonmonotonic-diffusion law of failure time distribution. The authors use the law to propose for the first time an analytical expression of the failure time distribution of an individual thermoelement, which fundamentally differs from the traditional simple exponential law with a constant failure intensity. The law is used to calculate the mean time between failures (MTBF), the 95% resource and equivalent failure rate of thermoelectric generator modules with series-parallel and parallel-series connection of thermocouples. Considered are the variants of schemes with different number of elements in rows and different number of rows for serial-parallel circuit and with different number of sequential groups and elements in a group for parallel-serial circuit. Coefficients of increase of the average failure time, 95% resource and coefficients of decrease of the equivalent failure intensity for a purely series connection of thermocouples are determined for the considered thermocouple schemes. It is established that these indicators can be improved by more than three orders of magnitude.
{"title":"Comparison of reliability of thermoelectric generator modules with different schemes for connecting thermoelements","authors":"P. Gorskyi","doi":"10.15222/tkea2022.4-6.59","DOIUrl":"https://doi.org/10.15222/tkea2022.4-6.59","url":null,"abstract":"The study compares reliability indicators of thermoelectric generator modules using the nonmonotonic-diffusion law of failure time distribution. The authors use the law to propose for the first time an analytical expression of the failure time distribution of an individual thermoelement, which fundamentally differs from the traditional simple exponential law with a constant failure intensity.\u0000The law is used to calculate the mean time between failures (MTBF), the 95% resource and equivalent failure rate of thermoelectric generator modules with series-parallel and parallel-series connection of thermocouples. Considered are the variants of schemes with different number of elements in rows and different number of rows for serial-parallel circuit and with different number of sequential groups and elements in a group for parallel-serial circuit. Coefficients of increase of the average failure time, 95% resource and coefficients of decrease of the equivalent failure intensity for a purely series connection of thermocouples are determined for the considered thermocouple schemes. It is established that these indicators can be improved by more than three orders of magnitude.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127590392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2020.3-4.24
А. А. Аshcheulov, D. Lavreniuk, M. Derevianchuk
The authors consider the aspects of the electric field distribution in an anisotropic medium and establish how its longitudinal and transverse components depend on the geometric factors. A rectangular plate of dimensions a×b×c is studied, its selected crystallographic axes located in the plane of the side face (a×b), while one of the axes is oriented at a certain angle α to the edge a. It is shown that applying a certain potential difference to the upper and lower faces electrically polarizes the volume of the plate and causes the appearance of the longitudinal and transverse components of the internal electric field. The authors investigate the possibility of transforming the magnitude of the electric field and methods for its optimization. The transformation coefficient of such a device is determined by the anisotropy of the dielectric permeability of the plate material and its shape coefficient k = a/b. The paper considers one of the design options for an anisotropic dielectric transformer and proposes its equivalent electrical circuit. Structural elements based on anisotropic dielectric transformers may be widely used both in power supplies of various electronic devices and for coordination of radar transceiver systems with antenna arrays of centimeter, millimeter and submillimeter wavelength ranges. The possibility of simultaneous transformation of constant and alternating electric fields allows them to be used in devices of simultaneous comparison, enabling to determine the current values of voltage, as well as the power of electromagnetic radiation in a wide range of wavelengths. The vortex nature of the electric field in the plate’s volume caused by the coefficient anisotropy of the dielectric permeability also creates the preconditions for the emergence of new principles for generating high-power electromagnetic radiation in a wide spectral range. The generation frequency of such devices is determined by the geometric dimensions of the anisotropic plate. The use of the described transformation effect will significantly expand the possibilities of practical application of the considered electrostatic phenomena, which will lead to the emergence of a new generation of devices for microwave technology, electronics and electric power.
{"title":"Electric field transformation effect in anisotropic dielectric medium","authors":"А. А. Аshcheulov, D. Lavreniuk, M. Derevianchuk","doi":"10.15222/tkea2020.3-4.24","DOIUrl":"https://doi.org/10.15222/tkea2020.3-4.24","url":null,"abstract":"The authors consider the aspects of the electric field distribution in an anisotropic medium and establish how its longitudinal and transverse components depend on the geometric factors.\u0000A rectangular plate of dimensions a×b×c is studied, its selected crystallographic axes located in the plane of the side face (a×b), while one of the axes is oriented at a certain angle α to the edge a. It is shown that applying a certain potential difference to the upper and lower faces electrically polarizes the volume of the plate and causes the appearance of the longitudinal and transverse components of the internal electric field. The authors investigate the possibility of transforming the magnitude of the electric field and methods for its optimization. The transformation coefficient of such a device is determined by the anisotropy of the dielectric permeability of the plate material and its shape coefficient k = a/b. The paper considers one of the design options for an anisotropic dielectric transformer and proposes its equivalent electrical circuit.\u0000Structural elements based on anisotropic dielectric transformers may be widely used both in power supplies of various electronic devices and for coordination of radar transceiver systems with antenna arrays of centimeter, millimeter and submillimeter wavelength ranges. The possibility of simultaneous transformation of constant and alternating electric fields allows them to be used in devices of simultaneous comparison, enabling to determine the current values of voltage, as well as the power of electromagnetic radiation in a wide range of wavelengths. The vortex nature of the electric field in the plate’s volume caused by the coefficient anisotropy of the dielectric permeability also creates the preconditions for the emergence of new principles for generating high-power electromagnetic radiation in a wide spectral range. The generation frequency of such devices is determined by the geometric dimensions of the anisotropic plate.\u0000The use of the described transformation effect will significantly expand the possibilities of practical application of the considered electrostatic phenomena, which will lead to the emergence of a new generation of devices for microwave technology, electronics and electric power.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127719787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.1-2.28
A. Druzhinin, A. Kutrakov, R. Zinko
The article contains the results of research and development of a system for active noise damping of an automobile engine. The main source of noise from a running engine is exhaust noise. The frequency spectrum of this sound has a pronounced low-frequency character, which explains its weak absorption when the sound is propagating in open spaces. A possible solution to this problem is to use an active system for suppressing the resonant frequencies of the muffler using strain gauges to read the primary information about the dynamic processes that determine the noise level. It is for such active noise suppression systems that the authors develop a high-temperature pressure sensor based on strain gauges made of silicon whiskers. Such strain gauges have unique mechanical properties, are characterized by high sensitivity and the ability to operate in various amplitude-frequency and temperature ranges up to 500℃. The study of the dynamic characteristics of pressure sensors made it possible to confirm the quality of its electromechanical part and determine that the measurement error of the sensor is ±0.5 in the temperature range of 20 to 500℃. The active noise suppression system is a buffer tank whose volume changes in accordance with signals from pressure sensors. This design makes it possible to dynamically change the resonant frequency of the buffer capacitance depending on the operating modes of the engine, which leads to a decrease in its noise characteristics. Using the developed additional resonator chamber with a variable volume in the exhaust muffler of an internal combustion engine made it possible to reduce resonance phenomena in the zone of low-frequency pulsations of the exhaust gas pressure from 57 to 43 Hz with a frequency drift in the range of 310 to 350 Hz, which significantly improved its noise characteristics.
{"title":"Silicon whisker pressure sensors for noise reduction in silencers","authors":"A. Druzhinin, A. Kutrakov, R. Zinko","doi":"10.15222/tkea2021.1-2.28","DOIUrl":"https://doi.org/10.15222/tkea2021.1-2.28","url":null,"abstract":"The article contains the results of research and development of a system for active noise damping of an automobile engine. The main source of noise from a running engine is exhaust noise. The frequency spectrum of this sound has a pronounced low-frequency character, which explains its weak absorption when the sound is propagating in open spaces. A possible solution to this problem is to use an active system for suppressing the resonant frequencies of the muffler using strain gauges to read the primary information about the dynamic processes that determine the noise level.\u0000It is for such active noise suppression systems that the authors develop a high-temperature pressure sensor based on strain gauges made of silicon whiskers. Such strain gauges have unique mechanical properties, are characterized by high sensitivity and the ability to operate in various amplitude-frequency and temperature ranges up to 500℃. The study of the dynamic characteristics of pressure sensors made it possible to confirm the quality of its electromechanical part and determine that the measurement error of the sensor is ±0.5 in the temperature range of 20 to 500℃.\u0000The active noise suppression system is a buffer tank whose volume changes in accordance with signals from pressure sensors. This design makes it possible to dynamically change the resonant frequency of the buffer capacitance depending on the operating modes of the engine, which leads to a decrease in its noise characteristics.\u0000Using the developed additional resonator chamber with a variable volume in the exhaust muffler of an internal combustion engine made it possible to reduce resonance phenomena in the zone of low-frequency pulsations of the exhaust gas pressure from 57 to 43 Hz with a frequency drift in the range of 310 to 350 Hz, which significantly improved its noise characteristics.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131794331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2022.1-3.31
A. Kondrik, G. Kovtun
The most researched materials for uncooled semiconductor detectors of ionizing radiation are CdTe:Cl and Cd0.9Zn0.1Te, which allow to obtain detectors with high values of resistivity ρ and electron mobility. In the process of producing detector materials, the background impurities and defects can be introduced into their matrix, and as a result the deep levels appear in the bandgap, acting as centers of capture and recombination of nonequilibrium charge carriers and reducing the registration ability of detectors. The aim of this study was to determine by computer simulation method the nature of the effect of background impurities and structural defects on the electrophysical and detector properties of CdTe and CdZnTe. Quantitative studies were conducted using reliability-tested models. The authors used the examples of Cl, Fe, Pb, Cr, Co, Ti, V, Ni, Ge, Sn to study the effect of doping and background impurities on the resistivity ρ, lifetime of nonequilibrium electrons and holes, the charge collection efficiency η of detectors based on CdTe and Cd0.9Zn0.1Te. The influence of cadmium vacancies on the degradation of the ρ and η of the detectors based on the materials under study was clarified. Impurities were found that reduce ρ and η in detectors based on CdTe:Cl and Cd0.9Zn0.1Te:Al. The ultimate concentration of donor impurities and defects with their uniform distribution over the crystal volume without the formation of clusters was determined. The effect of the Fermi level and defect levels on the change and degradation of the properties of the materials under study was found. The ratios of the concentrations of background impurities and defects were established, making it possible to obtain semiconductors CdTe:Cl and Cd0.9Zn0.1Te of an acceptable detector quality.
{"title":"Influence of impurities and structural defects on the properties of CdTe- and CdZnTe-based detectors","authors":"A. Kondrik, G. Kovtun","doi":"10.15222/tkea2022.1-3.31","DOIUrl":"https://doi.org/10.15222/tkea2022.1-3.31","url":null,"abstract":"The most researched materials for uncooled semiconductor detectors of ionizing radiation are CdTe:Cl and Cd0.9Zn0.1Te, which allow to obtain detectors with high values of resistivity ρ and electron mobility. In the process of producing detector materials, the background impurities and defects can be introduced into their matrix, and as a result the deep levels appear in the bandgap, acting as centers of capture and recombination of nonequilibrium charge carriers and reducing the registration ability of detectors. The aim of this study was to determine by computer simulation method the nature of the effect of background impurities and structural defects on the electrophysical and detector properties of CdTe and CdZnTe. Quantitative studies were conducted using reliability-tested models. The authors used the examples of Cl, Fe, Pb, Cr, Co, Ti, V, Ni, Ge, Sn to study the effect of doping and background impurities on the resistivity ρ, lifetime of nonequilibrium electrons and holes, the charge collection efficiency η of detectors based on CdTe and Cd0.9Zn0.1Te. The influence of cadmium vacancies on the degradation of the ρ and η of the detectors based on the materials under study was clarified. Impurities were found that reduce ρ and η in detectors based on CdTe:Cl and Cd0.9Zn0.1Te:Al. The ultimate concentration of donor impurities and defects with their uniform distribution over the crystal volume without the formation of clusters was determined. The effect of the Fermi level and defect levels on the change and degradation of the properties of the materials under study was found. The ratios of the concentrations of background impurities and defects were established, making it possible to obtain semiconductors CdTe:Cl and Cd0.9Zn0.1Te of an acceptable detector quality.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"344 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132975484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.15222/tkea2021.1-2.61
M. Kukurudziak, Y. Dobrovolsky
P-n junction semiconductor photodetectors are widely used in various fields of science and technology, including automation and telecontrol, instrumentation equipment, tracking systems, guidance, etc. The most demanded photoelectronic devices are silicon p-i-n photodiodes (PD). Their main field of application are installations using laser beams of near IR optical radiation spectrum, λ = 1060 nm, in particular. The article provides considerations and limit requirements for production of high-responsivity silicon p-i-n photodiodes and making theoretical parameters consistent with real photodiodes made according to the design. Characteristic properties of technology, construction and final parameters of the manufactured four-element segment p–i–n photodiode with a guard ring are described. The authors describe the criteria for choosing the material for making high-responsivity photodiodes. Results of the theoretical design for the capacitance of the photodiode based on the materials of different resistivity are presented. A theoretically possible value for the dark current of the responsive elements and the guard ring is considered for the silicon of 18 kOhm•cm. Criteria for the thickness of the PD crystal and the doped areas that provide for the maximum width of the space-charge region are presented. The dependence of the current pulse monochromatic responsivity from the operating voltage of the photodiode is shown for substrates with different thickness. The photodiodes obtained during this study have the pulse monochromatic responsivity of 0.48 A/W, which is higher than that of commercial products of well-known foreign manufacturers. The results achieved demonstrate that this technology is effective and the assumptions made during the calculation stage are valid.
{"title":"Silicon p-i-n photodiode with increased pulse sensitivity","authors":"M. Kukurudziak, Y. Dobrovolsky","doi":"10.15222/tkea2021.1-2.61","DOIUrl":"https://doi.org/10.15222/tkea2021.1-2.61","url":null,"abstract":"P-n junction semiconductor photodetectors are widely used in various fields of science and technology, including automation and telecontrol, instrumentation equipment, tracking systems, guidance, etc. The most demanded photoelectronic devices are silicon p-i-n photodiodes (PD). Their main field of application are installations using laser beams of near IR optical radiation spectrum, λ = 1060 nm, in particular.\u0000The article provides considerations and limit requirements for production of high-responsivity silicon p-i-n photodiodes and making theoretical parameters consistent with real photodiodes made according to the design. Characteristic properties of technology, construction and final parameters of the manufactured four-element segment p–i–n photodiode with a guard ring are described. \u0000The authors describe the criteria for choosing the material for making high-responsivity photodiodes. Results of the theoretical design for the capacitance of the photodiode based on the materials of different resistivity are presented. A theoretically possible value for the dark current of the responsive elements and the guard ring is considered for the silicon of 18 kOhm•cm. Criteria for the thickness of the PD crystal and the doped areas that provide for the maximum width of the space-charge region are presented. The dependence of the current pulse monochromatic responsivity from the operating voltage of the photodiode is shown for substrates with different thickness.\u0000The photodiodes obtained during this study have the pulse monochromatic responsivity of 0.48 A/W, which is higher than that of commercial products of well-known foreign manufacturers. The results achieved demonstrate that this technology is effective and the assumptions made during the calculation stage are valid.","PeriodicalId":231412,"journal":{"name":"Технология и конструирование в электронной аппаратуре","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133693225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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