{"title":"Accurate Measurements of Small Resistances in Vertical Interconnects with Small Aspect Ratios","authors":"M. Stucchi, F. Fodor, E. Marinissen","doi":"10.1109/ETS48528.2020.9131579","DOIUrl":null,"url":null,"abstract":"Resistance measurements of vertical interconnect elements by cross-bridge Kelvin resistors can yield values far below the expected value, if that resistance is calculated with the simple formula based on resistivity, interconnect length, and cross-sectional area; for small resistors, the measured value can even become negative. Analysis of current and potential distributions inside the simulated structures helps both to understand the causes of these non-realistic resistance values and to improve the design of the CBKR structures for preventing underestimation of the vertical interconnect resistance.","PeriodicalId":267309,"journal":{"name":"2020 IEEE European Test Symposium (ETS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE European Test Symposium (ETS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETS48528.2020.9131579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Resistance measurements of vertical interconnect elements by cross-bridge Kelvin resistors can yield values far below the expected value, if that resistance is calculated with the simple formula based on resistivity, interconnect length, and cross-sectional area; for small resistors, the measured value can even become negative. Analysis of current and potential distributions inside the simulated structures helps both to understand the causes of these non-realistic resistance values and to improve the design of the CBKR structures for preventing underestimation of the vertical interconnect resistance.