D. Eason, W. C. Hughes, J. Ren, K. Bowers, Z. Yu, J. Cook, J. Schetzina, G. Cantwell, W. Harsh
{"title":"High-brightness green light-emitting diodes","authors":"D. Eason, W. C. Hughes, J. Ren, K. Bowers, Z. Yu, J. Cook, J. Schetzina, G. Cantwell, W. Harsh","doi":"10.1109/DRC.1994.1009458","DOIUrl":null,"url":null,"abstract":"II-VI heterostructures composed of ZnSe-ZnTeSe layers have been employed to develop high-brightness green light-emitting diodes operating at peak wavelengths in the pure green spectral region (508-514 nm). The brightest devices produce 792 mu W (10 mA, 4V) peaked at 510 nm. This corresponds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W.","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1994.1009458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
II-VI heterostructures composed of ZnSe-ZnTeSe layers have been employed to develop high-brightness green light-emitting diodes operating at peak wavelengths in the pure green spectral region (508-514 nm). The brightest devices produce 792 mu W (10 mA, 4V) peaked at 510 nm. This corresponds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W.
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