Demonstrating a holographic memory having 100 Mrad total-ionizing-dose tolerance

Abstract

Currently, space systems require highly radiation tolerant memory. If memory with high radiation tolerance were available, then shielding of embedded systems for use in space could be reduced or removed, thereby greatly decreasing the weight of such space embedded systems. This study examines the radiation-hardened characteristics of a holographic memory. Using a cobalt 60 gamma radiation source, radiation experiments were conducted for a photopolymer holographic memory. Results show that the holographic memory can function correctly at a 100 Mrad total-ionizing dose. The radiation tolerance of the holographic memory is over 300 times higher than that of an electrically erasable programmable read-only memory (EEPROM). Moreover, this paper shows a demonstration applied for an optically reconfigurable gate array. The configuration procedure could be executed by using the radiation-damaged holographic memory.