Xian-jie Li, J. Ao, Rong Wang, Wei-Ji Liu, Zhigong Wang, Q. Zeng, Shiyong Liu, Chun-Guang Liang
{"title":"An 850 nm wavelength monolithic integrated photoreceiver with a single-power-supplied transimpedance amplifier based on GaAs PHEMT technology","authors":"Xian-jie Li, J. Ao, Rong Wang, Wei-Ji Liu, Zhigong Wang, Q. Zeng, Shiyong Liu, Chun-Guang Liang","doi":"10.1109/GAAS.2001.964348","DOIUrl":null,"url":null,"abstract":"An 850 nm wavelength monolithic integrated photoreceiver with a novel single-power-supplied transimpedance amplifier is reported based on 0.8 /spl mu/m depleted GaAs PHEMT technology. The IC consists of an MSM photodetector and a transimpedance amplifier with a 50 ohm-matched differential output. The MSM PD on the chip shows a dark current of 2.0 nA as well as a responsivity of 0.30 A/W under a bias of 3.5 V. The TIA shows a transimpedance gain of more than 58 dB/spl Omega/ with a -3 dB bandwidth of 2.0 GHz. Opening eye diagrams are demonstrated at bit-rates of 1.25 Gbit/s and 2.5 Gbit/s under a +5 V supply.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964348","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
An 850 nm wavelength monolithic integrated photoreceiver with a novel single-power-supplied transimpedance amplifier is reported based on 0.8 /spl mu/m depleted GaAs PHEMT technology. The IC consists of an MSM photodetector and a transimpedance amplifier with a 50 ohm-matched differential output. The MSM PD on the chip shows a dark current of 2.0 nA as well as a responsivity of 0.30 A/W under a bias of 3.5 V. The TIA shows a transimpedance gain of more than 58 dB/spl Omega/ with a -3 dB bandwidth of 2.0 GHz. Opening eye diagrams are demonstrated at bit-rates of 1.25 Gbit/s and 2.5 Gbit/s under a +5 V supply.
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