Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964378
Yu Wang, S. Cherepko, J.C.M. Hwang, Feiyu Wang, W. Jemison
This work demonstrates the prediction of asymmetry in intermodulation distortion of HBT power amplifiers under two-tone excitation. While previous predictions were based on Volterra series in conjunction with a simple device model, the present approach is based on harmonic-balance simulation in conjunction with a nonlinear large-signal device model. The present approach is validated by the agreement between simulations and measurements under different bias, matching and input conditions as well as tone separations. The present result is consistent with the Volterra-series analysis of the effect of baseband termination impedance on the intermodulation asymmetry.
{"title":"Asymemetry in intermodulation distortion of HBT power amplifiers","authors":"Yu Wang, S. Cherepko, J.C.M. Hwang, Feiyu Wang, W. Jemison","doi":"10.1109/GAAS.2001.964378","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964378","url":null,"abstract":"This work demonstrates the prediction of asymmetry in intermodulation distortion of HBT power amplifiers under two-tone excitation. While previous predictions were based on Volterra series in conjunction with a simple device model, the present approach is based on harmonic-balance simulation in conjunction with a nonlinear large-signal device model. The present approach is validated by the agreement between simulations and measurements under different bias, matching and input conditions as well as tone separations. The present result is consistent with the Volterra-series analysis of the effect of baseband termination impedance on the intermodulation asymmetry.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116917474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964381
J. Laskar, A. Sutono, C. Lee, M.F. Davis, M. Maeng, N. Lal, K. Lim, S. Pinel, M. Tentzeris, A. Obatoyinbo
This paper presents the development and characterization of compact and highly integrated microwave and millimeter wave radio front-end Systems-on-Package (SOP). The three-dimensional transceiver front-end SOP architectures incorporate on-package integrated lumped element passives as well as RF functions primarily filters, baluns, and antennas in standard multi-layer LTCC and fully-organic technologies. An LTCC-based 14 GHz transmitter for satellite outdoor unit, an OC-192 transmitter incorporating Ku-band Optical Sub-Carrier Multiplexing (OSCM) technique as well fully-organic SOP transmission lines and lumped-element components have been demonstrated. These prototypes suggest the feasibility of developing highly miniaturized cost-effective SOP transceivers applicable not only for wireless but also for optoelectronics links.
{"title":"Development of integrated 3D radio front-end system-on-package (SOP)","authors":"J. Laskar, A. Sutono, C. Lee, M.F. Davis, M. Maeng, N. Lal, K. Lim, S. Pinel, M. Tentzeris, A. Obatoyinbo","doi":"10.1109/GAAS.2001.964381","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964381","url":null,"abstract":"This paper presents the development and characterization of compact and highly integrated microwave and millimeter wave radio front-end Systems-on-Package (SOP). The three-dimensional transceiver front-end SOP architectures incorporate on-package integrated lumped element passives as well as RF functions primarily filters, baluns, and antennas in standard multi-layer LTCC and fully-organic technologies. An LTCC-based 14 GHz transmitter for satellite outdoor unit, an OC-192 transmitter incorporating Ku-band Optical Sub-Carrier Multiplexing (OSCM) technique as well fully-organic SOP transmission lines and lumped-element components have been demonstrated. These prototypes suggest the feasibility of developing highly miniaturized cost-effective SOP transceivers applicable not only for wireless but also for optoelectronics links.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124793893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964339
T. Ogawa, I. Kyu, H. Kondoh, S. Takatani
A fully MMIC 5 GHz-band transceiver module has been developed, which demonstrated high-speed modulation capability of 48 Mbps OFDM/64QAM with 5-7% error vector magnitude (EVM) for 5-6 GHz operations. The module is assembled on a multi-layer ceramic substrate with land grid type RF/DC terminals and measures 11.0/spl times/13.75/spl times/1.1 mm/sup 3/. The module incorporates four MMIC chips operating from /spl plusmn/3 V power supplies and supports a wide range of IF frequencies from 200 MHz to 1.8 GHz.
{"title":"A fully MMIC transceiver module for 5 GHz wireless communications","authors":"T. Ogawa, I. Kyu, H. Kondoh, S. Takatani","doi":"10.1109/GAAS.2001.964339","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964339","url":null,"abstract":"A fully MMIC 5 GHz-band transceiver module has been developed, which demonstrated high-speed modulation capability of 48 Mbps OFDM/64QAM with 5-7% error vector magnitude (EVM) for 5-6 GHz operations. The module is assembled on a multi-layer ceramic substrate with land grid type RF/DC terminals and measures 11.0/spl times/13.75/spl times/1.1 mm/sup 3/. The module incorporates four MMIC chips operating from /spl plusmn/3 V power supplies and supports a wide range of IF frequencies from 200 MHz to 1.8 GHz.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116270228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964352
M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Rodwell
We report a single-stage tuned amplifier that exhibits a peak small signal gain of 6.3 dB at 175 GHz. The amplifier was designed in a transferred-substrate InP-based HBT technology that has exhibited record values of extrapolated f/sub max/. The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band.
{"title":"Single-stage G-band HBT amplifier with 6.3 dB gain at 175 GHz","authors":"M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Rodwell","doi":"10.1109/GAAS.2001.964352","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964352","url":null,"abstract":"We report a single-stage tuned amplifier that exhibits a peak small signal gain of 6.3 dB at 175 GHz. The amplifier was designed in a transferred-substrate InP-based HBT technology that has exhibited record values of extrapolated f/sub max/. The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115787899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964350
T. Hirayama, N. Matsuno, M. Fujii, H. Hida
We developed an InGaP/GaAs heterojunction bipolar transistor (HBT) two-stage power amplifier monolithic microwave integrated circuit (MMIC) for 1.95-GHz W-CDMA. In this MMIC, intermodulation distortion (IMD) cancellation between the driver- and final-stage HBTs occurs, so we can reduce an adjacent-leakage-power-ratio (ACPR) and enhance power-added efficiency (PAE) by balancing the bias currents for each stage. The MMIC has a high PAE of 44%, an output power of 26.0 dBm, and a gain of 27.9 dB with ACPR of -35 dBc at a 5-MHz offset frequency under a supply voltage of 3.6 V. This PAE represents state-of-the-art performance of HBT MMICs for W-CDMA.
{"title":"PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMA","authors":"T. Hirayama, N. Matsuno, M. Fujii, H. Hida","doi":"10.1109/GAAS.2001.964350","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964350","url":null,"abstract":"We developed an InGaP/GaAs heterojunction bipolar transistor (HBT) two-stage power amplifier monolithic microwave integrated circuit (MMIC) for 1.95-GHz W-CDMA. In this MMIC, intermodulation distortion (IMD) cancellation between the driver- and final-stage HBTs occurs, so we can reduce an adjacent-leakage-power-ratio (ACPR) and enhance power-added efficiency (PAE) by balancing the bias currents for each stage. The MMIC has a high PAE of 44%, an output power of 26.0 dBm, and a gain of 27.9 dB with ACPR of -35 dBc at a 5-MHz offset frequency under a supply voltage of 3.6 V. This PAE represents state-of-the-art performance of HBT MMICs for W-CDMA.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130038029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964376
A. Baca, C. Monier, P. Chang, N. Li, F. Newman, E. Armour, S.Z. Sun, H. Hou
We report the fabrication of double heterojunction bipolar transistors (DHBTs) with the use of a new quaternary InGaAsN material system that takes advantage of a low energy band gap in the base to reduce operating voltages in GaAs-based electronic devices. InGaP/In/sub 0.03/Ga/sub 0.97/As/sub 0.99/N/sub 0.01//GaAs DHBTs with improved band gap engineering at both heterojunctions exhibit a DC peak current gain over 16 with small active emitter area. The use of the InGaAsN base layer allows a significant reduction of the turn-on voltage by 250 mV for the new technology over a standard InGaP/GaAs HBT, while maintaining high-frequency characteristics with cut-off frequency and maximum oscillation frequency as high as 40 GHz and 70 GHz, respectively. This technology is promising for next generation RF circuits using GaAs-based HBTs by reducing the operating voltage for low power consumption and better handling of supply voltages in advanced wireless handsets.
{"title":"High-speed performance of NpN InGaAsN-based double heterojunction bipolar transistors","authors":"A. Baca, C. Monier, P. Chang, N. Li, F. Newman, E. Armour, S.Z. Sun, H. Hou","doi":"10.1109/GAAS.2001.964376","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964376","url":null,"abstract":"We report the fabrication of double heterojunction bipolar transistors (DHBTs) with the use of a new quaternary InGaAsN material system that takes advantage of a low energy band gap in the base to reduce operating voltages in GaAs-based electronic devices. InGaP/In/sub 0.03/Ga/sub 0.97/As/sub 0.99/N/sub 0.01//GaAs DHBTs with improved band gap engineering at both heterojunctions exhibit a DC peak current gain over 16 with small active emitter area. The use of the InGaAsN base layer allows a significant reduction of the turn-on voltage by 250 mV for the new technology over a standard InGaP/GaAs HBT, while maintaining high-frequency characteristics with cut-off frequency and maximum oscillation frequency as high as 40 GHz and 70 GHz, respectively. This technology is promising for next generation RF circuits using GaAs-based HBTs by reducing the operating voltage for low power consumption and better handling of supply voltages in advanced wireless handsets.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134115617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964365
C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh
RF MEMS technology is a new technology that is already finding niche applications in radar and communications systems. Its low power, high performance, and tunability enables potential cost, size, and/or weight improvements in several systems. Emphasis is no longer focused on RF performance, as that aspect is well established. Currently, efforts are underway to establish and improve the reliability of the devices. As with any maturing technology, there is much room for improvement. However, results to date show continuing improvement in lifetime and provide an argument that these devices will eventually have very long lifetimes (> 10/sup 11/ cycles).
{"title":"RF MEMS: benefits & challenges of an evolving RF switch technology","authors":"C. Goldsmith, J. Kleber, B. Pillans, D. Forehand, A. Malczewski, P. Frueh","doi":"10.1109/GAAS.2001.964365","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964365","url":null,"abstract":"RF MEMS technology is a new technology that is already finding niche applications in radar and communications systems. Its low power, high performance, and tunability enables potential cost, size, and/or weight improvements in several systems. Emphasis is no longer focused on RF performance, as that aspect is well established. Currently, efforts are underway to establish and improve the reliability of the devices. As with any maturing technology, there is much room for improvement. However, results to date show continuing improvement in lifetime and provide an argument that these devices will eventually have very long lifetimes (> 10/sup 11/ cycles).","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124545740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964351
H. Tanaka, E. Suematsu, S. Handa, Y. Motouchi, N. Takahashi, A. Yamada, N. Matsumoto, H. Sato
In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm/spl times/1.3mm size shows a gain of 20dB in the 60GHz-band.
{"title":"60GHz-band high-gain MMIC cascode HBT amplifier","authors":"H. Tanaka, E. Suematsu, S. Handa, Y. Motouchi, N. Takahashi, A. Yamada, N. Matsumoto, H. Sato","doi":"10.1109/GAAS.2001.964351","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964351","url":null,"abstract":"In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm/spl times/1.3mm size shows a gain of 20dB in the 60GHz-band.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114359616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964377
Y. Noh, T.W. Lee, C. Park
A new on-chip linearizer that is applicable to L-band application is proposed. It is composed of base-emitter diode of the active bias transistor and a capacitor for RF signal shorting to the base node of the active bias transistor, which improves the gain compression and phase advance of the power amplifier with no additional DC power consumption, and has negligible signal loss with almost no increase in die area. The linearizer increases the 1 dB gain compression point by 18 dB and phase distortion by 16.49/spl deg/ while maintaining the base bias voltage of the power amplifier. A PCS and W-CDMA dual band power amplifier with single input, single output, and no switch for band selection is implemented by designing the amplifier with broadband characteristics, and exhibits an output power of 28.97(28.3) dBm, PAE of 44.7(37.4)%, and adjacent channel power ratio (ACPR) of -41(-45) dBc at the output power of 28(28) dBm under 3.0 V operation voltage for PCS(W-CDMA) applications.
{"title":"Linearized high efficient HBT power amplifier module for L-band application","authors":"Y. Noh, T.W. Lee, C. Park","doi":"10.1109/GAAS.2001.964377","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964377","url":null,"abstract":"A new on-chip linearizer that is applicable to L-band application is proposed. It is composed of base-emitter diode of the active bias transistor and a capacitor for RF signal shorting to the base node of the active bias transistor, which improves the gain compression and phase advance of the power amplifier with no additional DC power consumption, and has negligible signal loss with almost no increase in die area. The linearizer increases the 1 dB gain compression point by 18 dB and phase distortion by 16.49/spl deg/ while maintaining the base bias voltage of the power amplifier. A PCS and W-CDMA dual band power amplifier with single input, single output, and no switch for band selection is implemented by designing the amplifier with broadband characteristics, and exhibits an output power of 28.97(28.3) dBm, PAE of 44.7(37.4)%, and adjacent channel power ratio (ACPR) of -41(-45) dBc at the output power of 28(28) dBm under 3.0 V operation voltage for PCS(W-CDMA) applications.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129439158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-10-21DOI: 10.1109/GAAS.2001.964345
K. Gulden, M. Brunner, S. Eitel, H. Gauggel, R. Hovel, S. Hunziker, M. Moser
VCSEL arrays are attractive low-cost high-speed sources for free space and fiber coupled links. We discuss applications and performance limits of 1D and 2D VCSEL arrays. At Avalon Photonics Ltd. a broad variety of devices (up to 16/spl times/16) is developed and fabricated. Top and bottom emitting arrays offer new perspectives in optical and electrical packaging and are therefore of high interest for short haul parallel optical links, board-to-board and on-board ultra high-speed optical interconnects. Bandwidth requirements are increasing rapidly. The limits of VCSEL arrays in terms of modulation speed are analyzed and RF device optimization is discussed. Device and package limitations have to be considered. Important system level implications are also pointed out. Results of 850 nm multitransverse mode VCSEL arrays demonstrating excellent uniformity, low threshold current, high modulation efficiency and excellent multi-gigabit performance are presented. The paper ends with a discussion of future prospects in the field.
{"title":"VCSEL arrays for high speed optical links","authors":"K. Gulden, M. Brunner, S. Eitel, H. Gauggel, R. Hovel, S. Hunziker, M. Moser","doi":"10.1109/GAAS.2001.964345","DOIUrl":"https://doi.org/10.1109/GAAS.2001.964345","url":null,"abstract":"VCSEL arrays are attractive low-cost high-speed sources for free space and fiber coupled links. We discuss applications and performance limits of 1D and 2D VCSEL arrays. At Avalon Photonics Ltd. a broad variety of devices (up to 16/spl times/16) is developed and fabricated. Top and bottom emitting arrays offer new perspectives in optical and electrical packaging and are therefore of high interest for short haul parallel optical links, board-to-board and on-board ultra high-speed optical interconnects. Bandwidth requirements are increasing rapidly. The limits of VCSEL arrays in terms of modulation speed are analyzed and RF device optimization is discussed. Device and package limitations have to be considered. Important system level implications are also pointed out. Results of 850 nm multitransverse mode VCSEL arrays demonstrating excellent uniformity, low threshold current, high modulation efficiency and excellent multi-gigabit performance are presented. The paper ends with a discussion of future prospects in the field.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129017189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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