{"title":"Effect of process control in oxide-confined top-emitting lasers","authors":"M.Y. Li, W. Yuen, G.S. Li, C. Chang-Hasnain","doi":"10.1109/ISLC.1996.553758","DOIUrl":null,"url":null,"abstract":"Summary form only given. Transverse mode as a function of aperture size is studied. Stringent oxidation accuracy to within a fraction of 1 /spl mu/m is required to render high yield, single mode, oxide confined GaAs QW VCSELs.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553758","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Summary form only given. Transverse mode as a function of aperture size is studied. Stringent oxidation accuracy to within a fraction of 1 /spl mu/m is required to render high yield, single mode, oxide confined GaAs QW VCSELs.
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