Pub Date : 1996-12-01DOI: 10.1109/ISLC.1996.553722
T. Koch
Research on photonic integrated circuits initially focused on the technical challenges of combining a variety of distinct optical waveguide elements with a minimum of fabrication and epitaxial complexity. The vehicles used to chronicle the progress in this technology have often preceded any real market opportunity, instead hoping to stimulate the development of applications that would rely on dramatic cost-savings that PICs might deliver. With this model, WDM becomes a likely candidate for PIC technology. A number of simple photonic integrated circuits (PICs) are already commercially available in diverse application areas ranging from low-chirp integrated laser-electroabsorption modulator sources to high-power master oscillator-power amplifier (MOPA) sources.
{"title":"Technology and application trends of photonic integrated circuits","authors":"T. Koch","doi":"10.1109/ISLC.1996.553722","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553722","url":null,"abstract":"Research on photonic integrated circuits initially focused on the technical challenges of combining a variety of distinct optical waveguide elements with a minimum of fabrication and epitaxial complexity. The vehicles used to chronicle the progress in this technology have often preceded any real market opportunity, instead hoping to stimulate the development of applications that would rely on dramatic cost-savings that PICs might deliver. With this model, WDM becomes a likely candidate for PIC technology. A number of simple photonic integrated circuits (PICs) are already commercially available in diverse application areas ranging from low-chirp integrated laser-electroabsorption modulator sources to high-power master oscillator-power amplifier (MOPA) sources.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131751930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Temperature dependence of the gain characteristics in a 1.31-/spl mu/m GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98 /spl mu/m GaInAs/GaAs laser. It was found that the low characteristic temperature T/sub 0/ in the 1.31-/spl mu/m laser was determined by the temperature dependence of the transparent current density J/sub tr/.
{"title":"Experimental analysis of characteristic temperature in quantum-well semiconductor lasers","authors":"T. Higashi, T. Yamamoto, S. Kubota, S. Ogita","doi":"10.1109/2944.605702","DOIUrl":"https://doi.org/10.1109/2944.605702","url":null,"abstract":"Temperature dependence of the gain characteristics in a 1.31-/spl mu/m GaInAsP/InP quantum-well laser was measured and compared with that in a 0.98 /spl mu/m GaInAs/GaAs laser. It was found that the low characteristic temperature T/sub 0/ in the 1.31-/spl mu/m laser was determined by the temperature dependence of the transparent current density J/sub tr/.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115306969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-13DOI: 10.1109/ISLC.1996.553748
R. Strijbos, A. Muravjov, J. H. Blok, J. Hovenier, J. Lok, S. Pavlov, R. Schouten, V. Shastin, W. Wenckebach
The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.
{"title":"Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers","authors":"R. Strijbos, A. Muravjov, J. H. Blok, J. Hovenier, J. Lok, S. Pavlov, R. Schouten, V. Shastin, W. Wenckebach","doi":"10.1109/ISLC.1996.553748","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553748","url":null,"abstract":"The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126030532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-13DOI: 10.1109/ISLC.1996.553736
G. Crow, R. Abram
A self-consistent ensemble Monte Carlo simulation of charge transport in AlGaInP multiple quantum well lasers has been devised in an effort to understand why the light output from these lasers is reduced at high temperatures.
{"title":"Monte Carlo simulations of carrier transport in AlGaInP laser diodes","authors":"G. Crow, R. Abram","doi":"10.1109/ISLC.1996.553736","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553736","url":null,"abstract":"A self-consistent ensemble Monte Carlo simulation of charge transport in AlGaInP multiple quantum well lasers has been devised in an effort to understand why the light output from these lasers is reduced at high temperatures.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115524637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-13DOI: 10.1109/ISLC.1996.553738
H. Nakayama, Y. Arakawa
We theoretically discuss the interaction of electrons with LO phonons in quantum dot lasers using the coupled mode equations, and calculate lasing characteristics. The results show that there is no phonon bottleneck and an extremely low threshold current as well as a wide modulation bandwidth can be achieved.
{"title":"Calculation of lasing characteristics in quantum dot lasers considering interaction of electrons with LO phonons","authors":"H. Nakayama, Y. Arakawa","doi":"10.1109/ISLC.1996.553738","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553738","url":null,"abstract":"We theoretically discuss the interaction of electrons with LO phonons in quantum dot lasers using the coupled mode equations, and calculate lasing characteristics. The results show that there is no phonon bottleneck and an extremely low threshold current as well as a wide modulation bandwidth can be achieved.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116009118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-13DOI: 10.1109/ISLC.1996.553773
N. Stelmakh, A. Azouz, J. Lourtioz
To our knowledge, fine periodical evolutions of the pulse structure with the length of the external cavity have never been reported in short-pulse mode-locked extended-cavity laser diodes. In this communication, we demonstrate a strong inter-dependence between the external and intrinsic cavity lengths in these mode-locked laser systems when an external chirp compensation is used. We found that the length of the external cavity (l/sub e/) must be equal to a multiple of the intrinsic laser diode cavity length (l/sub i/) to produce standard pulse structures with one sub-pulse per intrinsic cavity roundtrip time. Similarly, the external cavity length must be equal to (m+1/n)*l/sub i/, with m being an integer, to obtain n sub-pulses per intrinsic cavity roundtrip time. In our experiments, we observed pronounced pulse structures for n up to 8. This latter value corresponds to the generation of /spl sim/250 fs pulse trains with a pulse repetition rate of /spl sim/300 GHz and a total energy /spl sim/20-30 pJ.
{"title":"Trains of 250 fs pulses at sub-intrinsic-cavity roundtrip intervals from chirped mode-locked laser diodes","authors":"N. Stelmakh, A. Azouz, J. Lourtioz","doi":"10.1109/ISLC.1996.553773","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553773","url":null,"abstract":"To our knowledge, fine periodical evolutions of the pulse structure with the length of the external cavity have never been reported in short-pulse mode-locked extended-cavity laser diodes. In this communication, we demonstrate a strong inter-dependence between the external and intrinsic cavity lengths in these mode-locked laser systems when an external chirp compensation is used. We found that the length of the external cavity (l/sub e/) must be equal to a multiple of the intrinsic laser diode cavity length (l/sub i/) to produce standard pulse structures with one sub-pulse per intrinsic cavity roundtrip time. Similarly, the external cavity length must be equal to (m+1/n)*l/sub i/, with m being an integer, to obtain n sub-pulses per intrinsic cavity roundtrip time. In our experiments, we observed pronounced pulse structures for n up to 8. This latter value corresponds to the generation of /spl sim/250 fs pulse trains with a pulse repetition rate of /spl sim/300 GHz and a total energy /spl sim/20-30 pJ.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116564554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-13DOI: 10.1109/ISLC.1996.558745
M. Shtaif, G. Eisenstein
We describe a detailed calculation of BER performance in nonlinear optical amplifiers. The analysis addresses noise in the nonlinear gain regime and dynamical effects at high bit rates related to slow gain dynamics. Improved performance of an adaptive decision threshold level receiver is proposed.
{"title":"Analysis of bit error rate performance signal processing schemes exploiting semiconductor optical amplifiers","authors":"M. Shtaif, G. Eisenstein","doi":"10.1109/ISLC.1996.558745","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558745","url":null,"abstract":"We describe a detailed calculation of BER performance in nonlinear optical amplifiers. The analysis addresses noise in the nonlinear gain regime and dynamical effects at high bit rates related to slow gain dynamics. Improved performance of an adaptive decision threshold level receiver is proposed.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129552977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-13DOI: 10.1109/ISLC.1996.553760
E. Strzelecka, T. Wipiejewski, J. Ko, B. Thibeault, L. Coldren
An array of 7 multiple-wavelength MBE-regrown InGaAs QW VCSELs with 15 nm span and 30 /spl mu/m pitch is monolithically integrated with a refractive GaAs microlens on the back surface. The lens collimates individual beams to a divergence half angle <1.5/spl deg/ and separates them by /spl sim/5.
{"title":"Multiple-wavelength MBE-regrown vertical-cavity laser arrays integrated with refractive microlenses for optical interconnections","authors":"E. Strzelecka, T. Wipiejewski, J. Ko, B. Thibeault, L. Coldren","doi":"10.1109/ISLC.1996.553760","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553760","url":null,"abstract":"An array of 7 multiple-wavelength MBE-regrown InGaAs QW VCSELs with 15 nm span and 30 /spl mu/m pitch is monolithically integrated with a refractive GaAs microlens on the back surface. The lens collimates individual beams to a divergence half angle <1.5/spl deg/ and separates them by /spl sim/5.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129789898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-13DOI: 10.1109/ISLC.1996.553774
J. Whiteaway
It is essential when designing high performance optical systems to consider the complex interactions between components. This paper describes a detailed model that simulates the optical interactions in systems incorporating semiconductor lasers and amplifiers.
{"title":"General time-domain simulator for optical systems incorporating semiconductor lasers and amplifiers","authors":"J. Whiteaway","doi":"10.1109/ISLC.1996.553774","DOIUrl":"https://doi.org/10.1109/ISLC.1996.553774","url":null,"abstract":"It is essential when designing high performance optical systems to consider the complex interactions between components. This paper describes a detailed model that simulates the optical interactions in systems incorporating semiconductor lasers and amplifiers.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124745246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-10-13DOI: 10.1109/ISLC.1996.558846
S.F. Lim, G.S. Li, W. Yuen, C. Chang-Hasnain
Summary form only given. We demonstrate the first intracavity InGaAs quantum-well photodetector within a VCSEL laser diode. Effective responsivity is as high as 0.23 A/W; dark current is less than 1 nA, limited by our noise floor. In this work, we present experimental results of the first VCSEL with an intracavity quantum-well photodetector. The quantum well with its embedded position prevents stray light from interfering with the power detection and monitoring while its thin active region minimizes the dark current.
{"title":"Intracavity quantum-well photodetection of a vertical-cavity surface-emitting laser","authors":"S.F. Lim, G.S. Li, W. Yuen, C. Chang-Hasnain","doi":"10.1109/ISLC.1996.558846","DOIUrl":"https://doi.org/10.1109/ISLC.1996.558846","url":null,"abstract":"Summary form only given. We demonstrate the first intracavity InGaAs quantum-well photodetector within a VCSEL laser diode. Effective responsivity is as high as 0.23 A/W; dark current is less than 1 nA, limited by our noise floor. In this work, we present experimental results of the first VCSEL with an intracavity quantum-well photodetector. The quantum well with its embedded position prevents stray light from interfering with the power detection and monitoring while its thin active region minimizes the dark current.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132469534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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