An accurate measurement method for optical radiation loss of silicon-on-insulator curved waveguides

Q. Zheng, DeGui Sun, I. Hasan, S. Abdul-Majid, T. Hall
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Abstract

Silicon-on-insulator (SOI) photonic integrated circuits have recently become a research topic of great interest due to their compact confinements and compatibility with the modern micro-electronics. Low-loss SOI curved waveguides are attracting attention as they offer solutions to the dominant issue of integration density of planar lightwave circuits on a single SOI chip. Propagation loss and radiation loss rate of SOI curved waveguides are accurately measured by using Fabry-Perot interferometric method with the help of an optical vector analyzer (Luna system). The presented technique provides a universal solution for optical loss measurement of photonic integrated chips.
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一种精确测量绝缘体上硅弯曲波导光辐射损耗的方法
绝缘体上硅(SOI)光子集成电路由于其紧凑的空间和与现代微电子技术的兼容性,近年来成为一个备受关注的研究课题。低损耗SOI曲线波导解决了平面光波电路在单个SOI芯片上的集成密度问题,引起了人们的广泛关注。利用光矢量分析仪(Luna系统),采用法布里-珀罗干涉法对SOI弯曲波导的传播损耗和辐射损耗率进行了精确测量。该技术为光子集成芯片的光损耗测量提供了一种通用的解决方案。
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