Simulation of a flip chip bonding technique using reactive foils

F. Kraemer, C. Pauly, F. Muecklich, S. Wiese
{"title":"Simulation of a flip chip bonding technique using reactive foils","authors":"F. Kraemer, C. Pauly, F. Muecklich, S. Wiese","doi":"10.1109/EUROSIME.2015.7103143","DOIUrl":null,"url":null,"abstract":"New bonding techniques are required in order to overcome the problems caused by the necessary interconnection of big and thin silicon chips with organic interposers. A local heat source at the bonding interface would be beneficial in order to reduce the adverse thermal stress on the emerging assemblies. The required local heating can be achieved by reactive foils, which are stacks of thin metal layers that intermix after an ignition and supply thermal energy during this reaction. This paper summarises the results of a thermal transient FEM analysis, which checks the applicability of reactive foils as local heat source for the soldering of flip chip interconnections. This thermal analysis applies an artificial test structure with the interconnection dimensions of a flip chip assembly. The surrounding silicon chip and substrate have much larger dimensions in order to act as a heat sink with a large thermal mass. The interconnections are arranged in such a way that thermal interactions between adjacent interconnections can be analysed. The thermal energy of the reactive foil is induced sequentially to the assembly at the interface between substrate pad and solder joint. The simulation results show a localised influence of the thermal energy to the assembly. The heat distributes over the substrate pads and the adjacent solder volume. Increased temperatures are barely visible in the substrate and the silicon chip. The substrate acts as thermal isolator and the heat conduction through the solder ball is much slower than the reaction speed of the foil. Thus, even the small pitch between the flip chip interconnections causes a sufficient thermal isolation during the rapid process. The temperature increase at the silicon is just less than 10K. However the thermal isolation enables the conversion of the limited thermal energy into high temperatures. The temperatures on top of the copper pad are sufficiently high to melt the adjacent solder. Furthermore the temperatures are high enough to continue the self-propagating reaction of the foil. The major influence on the resulting maximum temperature is the energy input of the foil, which is defined by the type of reactive system and its thickness.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2015.7103143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

New bonding techniques are required in order to overcome the problems caused by the necessary interconnection of big and thin silicon chips with organic interposers. A local heat source at the bonding interface would be beneficial in order to reduce the adverse thermal stress on the emerging assemblies. The required local heating can be achieved by reactive foils, which are stacks of thin metal layers that intermix after an ignition and supply thermal energy during this reaction. This paper summarises the results of a thermal transient FEM analysis, which checks the applicability of reactive foils as local heat source for the soldering of flip chip interconnections. This thermal analysis applies an artificial test structure with the interconnection dimensions of a flip chip assembly. The surrounding silicon chip and substrate have much larger dimensions in order to act as a heat sink with a large thermal mass. The interconnections are arranged in such a way that thermal interactions between adjacent interconnections can be analysed. The thermal energy of the reactive foil is induced sequentially to the assembly at the interface between substrate pad and solder joint. The simulation results show a localised influence of the thermal energy to the assembly. The heat distributes over the substrate pads and the adjacent solder volume. Increased temperatures are barely visible in the substrate and the silicon chip. The substrate acts as thermal isolator and the heat conduction through the solder ball is much slower than the reaction speed of the foil. Thus, even the small pitch between the flip chip interconnections causes a sufficient thermal isolation during the rapid process. The temperature increase at the silicon is just less than 10K. However the thermal isolation enables the conversion of the limited thermal energy into high temperatures. The temperatures on top of the copper pad are sufficiently high to melt the adjacent solder. Furthermore the temperatures are high enough to continue the self-propagating reaction of the foil. The major influence on the resulting maximum temperature is the energy input of the foil, which is defined by the type of reactive system and its thickness.
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利用无功箔的倒装片键合技术的模拟
为了克服用有机中间体将又大又薄的硅片互连所带来的问题,需要新的键合技术。在接合界面处放置一个局部热源是有益的,以减少对新兴组件的不利热应力。所需的局部加热可以通过反应箔来实现,反应箔是一堆薄金属层,在点火后混合,并在反应过程中提供热能。本文总结了热瞬态有限元分析的结果,验证了无功箔作为倒装芯片互连焊接局部热源的适用性。这种热分析应用了一个具有倒装芯片组装互连尺寸的人工测试结构。周围的硅片和衬底有更大的尺寸,以作为一个大的热质量的散热器。互连的排列方式使得相邻互连之间的热相互作用可以被分析。反应性箔的热能依次被诱导到衬底衬垫和焊点之间的界面上。仿真结果表明,热能对组件有局部影响。热量分布在衬底焊盘和邻近的焊料体积上。升高的温度在衬底和硅芯片上几乎看不见。衬底作为热隔离器,通过焊料球的热传导比箔的反应速度慢得多。因此,即使倒装芯片互连之间的小间距也会在快速过程中产生足够的热隔离。硅的温升小于10K。然而,热隔离使有限的热能转化为高温。铜衬垫顶部的温度足够高,足以熔化相邻的焊料。此外,温度足够高,以继续箔的自传播反应。对产生的最高温度的主要影响是箔的能量输入,这是由反应系统的类型和它的厚度来定义的。
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