Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103132
A. Chernyakov, A. L. Zakgeim, K. Bulashevich, S. Karpov
The paper reports on influence of the emission wavelength on characteristics and performance of high-power light-emitting diodes (LEDs) emitting light in the near-UV (370 nm) and green (530 nm) spectral ranges and having a similar chip design. Similarity and difference in operation of the LEDs is revealed by their detailed characterization. The correlations between the device characteristics and properties of materials used for the LED fabrication are discussed.
{"title":"Comparison of electrical, thermal, and optical characteristics of high-power LEDs operating in various spectral ranges: From UV to green","authors":"A. Chernyakov, A. L. Zakgeim, K. Bulashevich, S. Karpov","doi":"10.1109/EUROSIME.2015.7103132","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103132","url":null,"abstract":"The paper reports on influence of the emission wavelength on characteristics and performance of high-power light-emitting diodes (LEDs) emitting light in the near-UV (370 nm) and green (530 nm) spectral ranges and having a similar chip design. Similarity and difference in operation of the LEDs is revealed by their detailed characterization. The correlations between the device characteristics and properties of materials used for the LED fabrication are discussed.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125060059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103150
U. Zschenderlein, Karthika Suresh, M. Baum, B. Wunderle
This paper covers a detailed preliminary study to micro bending tests used to obtain the mechanical properties of nanoparticles as used in advanced electrical or thermal joints. A method for direct, easy, fast and highly accurate transformation of an experimental force-displacement-curve into the corresponding σ-ε-curve is presented. That gives access to the elastic and plastic properties of the material. No additional profiling measurements are necessary. The authors focus on the theoretical background of both, the bending test itself as well as the transformation. Both is discussed in detail by utilizing the results of a finite elements model which simulates a micro bending test.
{"title":"Mechanical characterization of sintered nanoparticles for advanced electrical and thermal joints: σ-ε-transformation in micro bending tests","authors":"U. Zschenderlein, Karthika Suresh, M. Baum, B. Wunderle","doi":"10.1109/EUROSIME.2015.7103150","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103150","url":null,"abstract":"This paper covers a detailed preliminary study to micro bending tests used to obtain the mechanical properties of nanoparticles as used in advanced electrical or thermal joints. A method for direct, easy, fast and highly accurate transformation of an experimental force-displacement-curve into the corresponding σ-ε-curve is presented. That gives access to the elastic and plastic properties of the material. No additional profiling measurements are necessary. The authors focus on the theoretical background of both, the bending test itself as well as the transformation. Both is discussed in detail by utilizing the results of a finite elements model which simulates a micro bending test.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115213673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103100
M. Rovitto, W. Zisser, H. Ceric, T. Grasser
Recently, Through Silicon Vias (TSVs) have attracted much attention in three-dimensional (3D) integration technology due to their function as vertical connections of the different stacked semiconductor dies. Since electromigration (EM) will continue to be a key reliability issue in modern structures, the prediction of the EM failure behavior is a crucial necessity. Traditionally, Black's equation has been used from the early times of EM investigations for the estimation of the interconnect time to failure. In this work we investigate the applicability of Black's equation to open copper TSV structures using TCAD. TCAD can significantly contribute to the comprehension of EM failure mechanisms, in particular for the understanding of the early failure mode dominated by the void nucleation mechanism. The simulation procedure is applied to an open copper TSV technology in order to find the sites where void formation is most likely to occur. The time to failure is determined as the time needed to reach the stress threshold for void nucleation. Simulations are carried out for different current densities and successfully fitted to Black's equation. In this way, we have shown that failure development in studied TSV structures obeys Black's equation.
{"title":"Electromigration modelling of void nucleation in open Cu-TSVs","authors":"M. Rovitto, W. Zisser, H. Ceric, T. Grasser","doi":"10.1109/EUROSIME.2015.7103100","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103100","url":null,"abstract":"Recently, Through Silicon Vias (TSVs) have attracted much attention in three-dimensional (3D) integration technology due to their function as vertical connections of the different stacked semiconductor dies. Since electromigration (EM) will continue to be a key reliability issue in modern structures, the prediction of the EM failure behavior is a crucial necessity. Traditionally, Black's equation has been used from the early times of EM investigations for the estimation of the interconnect time to failure. In this work we investigate the applicability of Black's equation to open copper TSV structures using TCAD. TCAD can significantly contribute to the comprehension of EM failure mechanisms, in particular for the understanding of the early failure mode dominated by the void nucleation mechanism. The simulation procedure is applied to an open copper TSV technology in order to find the sites where void formation is most likely to occur. The time to failure is determined as the time needed to reach the stress threshold for void nucleation. Simulations are carried out for different current densities and successfully fitted to Black's equation. In this way, we have shown that failure development in studied TSV structures obeys Black's equation.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122380969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103116
D. Nguyen, W. Belkhir, N. Ratier, Bin Yang, M. Lenczner, F. Zamkotsian, Horatiu Cirstea
This paper reports recent advances in the development of a symbolic asymptotic modeling software package MEMSALab which will be used for automatic generation of asymptotic models for arrays of micro and nanosystems. First, an asymptotic model for the stationary heat equation in a Micro-Mirror Array developed for astrophysics is presented together with some key elements of its derivation. This illustrates the mathematical operations that need to be implemented in MEMSALab. The principle of operation of this software is to construct models incrementally so that model features can be included step by step. This idea conceptualized under the name “by extension-combination” is presented for the first time after having recalled the general functioning principles. A friendly user language recently introduced is also shortly discussed.
{"title":"A multi-scale model of a Micro-Mirror Array and an automatic model derivation tool","authors":"D. Nguyen, W. Belkhir, N. Ratier, Bin Yang, M. Lenczner, F. Zamkotsian, Horatiu Cirstea","doi":"10.1109/EUROSIME.2015.7103116","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103116","url":null,"abstract":"This paper reports recent advances in the development of a symbolic asymptotic modeling software package MEMSALab which will be used for automatic generation of asymptotic models for arrays of micro and nanosystems. First, an asymptotic model for the stationary heat equation in a Micro-Mirror Array developed for astrophysics is presented together with some key elements of its derivation. This illustrates the mathematical operations that need to be implemented in MEMSALab. The principle of operation of this software is to construct models incrementally so that model features can be included step by step. This idea conceptualized under the name “by extension-combination” is presented for the first time after having recalled the general functioning principles. A friendly user language recently introduced is also shortly discussed.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117042579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103097
B. Dompierre, L. Barrière, A. François, E. Wyart
This study is focused on the methodology dedicated to the identification of parameters of a general Chaboche model [1] for a nanosilver sintered material. This material is used, in particular, for die-attachment in power electronics applications under harsh temperature conditions. This material model is an elastic-viscous-plastic constitutive model accounting for creep and kinematic hardening mechanisms which underlie ratcheting behavior. The proposed methodology relies on an evolutionary algorithm which is coupled with state-of-the-art surrogate modeling. The implemented procedure enables an efficient and robust identification of the parameters of the constitutive model. The methodology is applied to the characterization of a sintered nanosilver joint. Experimental data are extracted from literature in the case of a classical lap-shear test [2]. The Chaboche model is identified for three temperatures from 25°C to 325°C. A monotonic variation of the parameters in function of the temperature is imposed in order to ease the interpolation of parameters inside the temperature range. The parameters identified for the Chaboche model present a better correlation with experiments for each temperature than the Ohno-Wang and Anand constitutive models identified in [2].
{"title":"Surrogate model based mechanical characterization of lead-free soldered joint material exhibiting ratcheting behavior: An advanced methodology","authors":"B. Dompierre, L. Barrière, A. François, E. Wyart","doi":"10.1109/EUROSIME.2015.7103097","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103097","url":null,"abstract":"This study is focused on the methodology dedicated to the identification of parameters of a general Chaboche model [1] for a nanosilver sintered material. This material is used, in particular, for die-attachment in power electronics applications under harsh temperature conditions. This material model is an elastic-viscous-plastic constitutive model accounting for creep and kinematic hardening mechanisms which underlie ratcheting behavior. The proposed methodology relies on an evolutionary algorithm which is coupled with state-of-the-art surrogate modeling. The implemented procedure enables an efficient and robust identification of the parameters of the constitutive model. The methodology is applied to the characterization of a sintered nanosilver joint. Experimental data are extracted from literature in the case of a classical lap-shear test [2]. The Chaboche model is identified for three temperatures from 25°C to 325°C. A monotonic variation of the parameters in function of the temperature is imposed in order to ease the interpolation of parameters inside the temperature range. The parameters identified for the Chaboche model present a better correlation with experiments for each temperature than the Ohno-Wang and Anand constitutive models identified in [2].","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128727453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103134
R. Dauksevicius, R. Gaidys, E. O’Reilly, M. Seifikar
This paper reports the results of finite element modeling and analysis of a vertically-aligned ZnO nanowire including surrounding chip components (seed layer, insulating top layer and metal electrodes), taking into account the influence of external capacitance and considering different nanowire morphologies and electrode topographies in order to predict magnitude of electrical outputs as a function of applied dynamic load (compression and/or bending). The length and diameter of the modeled nanowire is in the μm and sub-μm range, respectively and it is intended to function as a single “piezo-pixel” in a matrix of interconnected ZnO nanowires performing dynamic pressure sensing, which could be used for ultraprecise reconstruction of the smallest fingerprint features in highly-reliable security and ID applications.
{"title":"Finite element modeling of ZnO nanowire with different configurations of electrodes connected to external capacitive circuit for pressure sensing applications","authors":"R. Dauksevicius, R. Gaidys, E. O’Reilly, M. Seifikar","doi":"10.1109/EUROSIME.2015.7103134","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103134","url":null,"abstract":"This paper reports the results of finite element modeling and analysis of a vertically-aligned ZnO nanowire including surrounding chip components (seed layer, insulating top layer and metal electrodes), taking into account the influence of external capacitance and considering different nanowire morphologies and electrode topographies in order to predict magnitude of electrical outputs as a function of applied dynamic load (compression and/or bending). The length and diameter of the modeled nanowire is in the μm and sub-μm range, respectively and it is intended to function as a single “piezo-pixel” in a matrix of interconnected ZnO nanowires performing dynamic pressure sensing, which could be used for ultraprecise reconstruction of the smallest fingerprint features in highly-reliable security and ID applications.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128554602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103146
G. Pham, M. Pfost
Large power semiconductors are complex structures, their metallization usually containing many thousands of contacts or vias. Because of this, detailed FEM simulations of the whole device are nowadays not possible because of excessive simulation time. This paper introduces a simulation approach which allows quick identification of critical regions with respect to lifetime by a simplified simulation. For this, the complex layers are replaced by a much simpler equivalent layer, allowing a simulation of the whole device even including its package. In a second step, precise simulations taking all details of the structure into account are carried out, but only for the critical regions of interest. Thus, this approach gives detailed results where required with consideration of the whole structure including packaging. Further, the simulation time requirements are very moderate.
{"title":"Efficient simulation of thermo-mechanical stress in the on-chip metallization of power semiconductors","authors":"G. Pham, M. Pfost","doi":"10.1109/EUROSIME.2015.7103146","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103146","url":null,"abstract":"Large power semiconductors are complex structures, their metallization usually containing many thousands of contacts or vias. Because of this, detailed FEM simulations of the whole device are nowadays not possible because of excessive simulation time. This paper introduces a simulation approach which allows quick identification of critical regions with respect to lifetime by a simplified simulation. For this, the complex layers are replaced by a much simpler equivalent layer, allowing a simulation of the whole device even including its package. In a second step, precise simulations taking all details of the structure into account are carried out, but only for the critical regions of interest. Thus, this approach gives detailed results where required with consideration of the whole structure including packaging. Further, the simulation time requirements are very moderate.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"41 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114120021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103107
H. Nabi, D. Schweitzer, D. Vu, I. Maus, L. Weiss
The numerical simulation and prediction of interfacial delamination in electronic packages using the finite element method requires a correct understanding of the failure and an accurate characterization of the materials involved at the interface. In this work, experiments were realized to characterize the interfacial adhesion and fracture toughness of copper-to-epoxy-molding-compound interfaces. Adhesion parameters for different combinations of coppers and molding compounds were extracted from the so-called micro mixed mode test (μMMT) and button shear test (BST). Finite element simulations using cohesive zone modeling (CZM) were used to predict the delamination behavior of different micro-electronic packages being subjected to half cycle tests. The results of the numerical simulation and prediction were verified experimentally.
{"title":"Prediction of package delamination based on μMMT and BST experiments","authors":"H. Nabi, D. Schweitzer, D. Vu, I. Maus, L. Weiss","doi":"10.1109/EUROSIME.2015.7103107","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103107","url":null,"abstract":"The numerical simulation and prediction of interfacial delamination in electronic packages using the finite element method requires a correct understanding of the failure and an accurate characterization of the materials involved at the interface. In this work, experiments were realized to characterize the interfacial adhesion and fracture toughness of copper-to-epoxy-molding-compound interfaces. Adhesion parameters for different combinations of coppers and molding compounds were extracted from the so-called micro mixed mode test (μMMT) and button shear test (BST). Finite element simulations using cohesive zone modeling (CZM) were used to predict the delamination behavior of different micro-electronic packages being subjected to half cycle tests. The results of the numerical simulation and prediction were verified experimentally.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114532591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103118
Changwoon Han, Seungil Park
Large-scaled dye-sensitized solar cell (DSC) modules are recently developed for building-integrated photovoltaic (BIPV) applications. In the modules, two glasses with electrodes and dye are sealed together to prevent the leakage of liquid electrolyte. It is known that DSC modules deteriorate rapidly under high temperature conditions. Previous studies showed that expansion of liquid electrolyte in the module is the main reason for the degradation; the expansion of electrolyte induces the breakage of sealant material of DSC module in high temperature. This study investigates how the sealant curing process affects the integrity of DSC module in high temperature. Sealant samples are made up by several UV curing times. Shadow moiré technique is used to measure the coefficient of thermal expansion (CTE) of the sealant samples. With the test results, finite element analyses are conducted to optimize the curing process time. It is finally suggested that the longer the curing time, the more robust the DSC module.
{"title":"Material characterization and process optimization of dye-sensitized solar cell sealant","authors":"Changwoon Han, Seungil Park","doi":"10.1109/EUROSIME.2015.7103118","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103118","url":null,"abstract":"Large-scaled dye-sensitized solar cell (DSC) modules are recently developed for building-integrated photovoltaic (BIPV) applications. In the modules, two glasses with electrodes and dye are sealed together to prevent the leakage of liquid electrolyte. It is known that DSC modules deteriorate rapidly under high temperature conditions. Previous studies showed that expansion of liquid electrolyte in the module is the main reason for the degradation; the expansion of electrolyte induces the breakage of sealant material of DSC module in high temperature. This study investigates how the sealant curing process affects the integrity of DSC module in high temperature. Sealant samples are made up by several UV curing times. Shadow moiré technique is used to measure the coefficient of thermal expansion (CTE) of the sealant samples. With the test results, finite element analyses are conducted to optimize the curing process time. It is finally suggested that the longer the curing time, the more robust the DSC module.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130850752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-04-19DOI: 10.1109/EUROSIME.2015.7103110
B. Métais, A. Kabakchiev, Y. Maniar, M. Guyenot, R. Metasch, M. Roellig, P. Rettenmeier, P. Buhl, S. Weihe
During the past decade the demand for high performance automotive electronics is steadily increasing. An efficient development of such products requires the use of durability assessment techniques throughout the whole design optimization process. Since typical components comprise a large number of different materials and complex geometrical structures, Finite Element (FE) analysis is preferably used for durability evaluation and continuously replaces analytical calculations. However, a direct lifetime calculation by means of FE-techniques is still not achieved, partly due to the lack of material models capable of mapping the intrinsic material degradation under the relevant thermo-mechanical loads. Here, we propose a material model for a tin-based solder alloy which describes the non-linear mechanical behavior at the beginning of deformation as well as during continuous cyclic aging. We investigated the evolution of the mechanical properties and microstructure of the solder alloy Sn96:5Ag3:5 by cyclic strain-rate controlled fatigue- and creep-tests on as-casted standardized specimens. Material modeling is focused on the description of the complex interplay between viscoplastic, fatigue and creep processes observed in the experiment. Finally, a very good agreement is obtained between the measurements and the numerical model, which can offer new opportunities for lifetime simulations of lead-free solder joints.
{"title":"A viscoplastic-fatigue-creep damage model for tin-based solder alloy","authors":"B. Métais, A. Kabakchiev, Y. Maniar, M. Guyenot, R. Metasch, M. Roellig, P. Rettenmeier, P. Buhl, S. Weihe","doi":"10.1109/EUROSIME.2015.7103110","DOIUrl":"https://doi.org/10.1109/EUROSIME.2015.7103110","url":null,"abstract":"During the past decade the demand for high performance automotive electronics is steadily increasing. An efficient development of such products requires the use of durability assessment techniques throughout the whole design optimization process. Since typical components comprise a large number of different materials and complex geometrical structures, Finite Element (FE) analysis is preferably used for durability evaluation and continuously replaces analytical calculations. However, a direct lifetime calculation by means of FE-techniques is still not achieved, partly due to the lack of material models capable of mapping the intrinsic material degradation under the relevant thermo-mechanical loads. Here, we propose a material model for a tin-based solder alloy which describes the non-linear mechanical behavior at the beginning of deformation as well as during continuous cyclic aging. We investigated the evolution of the mechanical properties and microstructure of the solder alloy Sn96:5Ag3:5 by cyclic strain-rate controlled fatigue- and creep-tests on as-casted standardized specimens. Material modeling is focused on the description of the complex interplay between viscoplastic, fatigue and creep processes observed in the experiment. Finally, a very good agreement is obtained between the measurements and the numerical model, which can offer new opportunities for lifetime simulations of lead-free solder joints.","PeriodicalId":250897,"journal":{"name":"2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133692066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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