{"title":"A practicable de-embedding network at higher frequency of a packaged GaN device","authors":"S. Dong, P. Tasker, Guofeng Wang, J. Lees","doi":"10.1109/IEEE-IWS.2016.7585473","DOIUrl":null,"url":null,"abstract":"The intrinsic performance of the devices is of great meaning during power amplifiers design. A method to update de-embedding network at higher frequency for packaged power devices is put forward based on physical modeling idea. The de-embedding network at 5.8 GHz of a packaged GaN HEMT is presented and its practicability is verified through error analysis. This method is prospected to be applied to other packaged microwave devices.","PeriodicalId":185971,"journal":{"name":"2016 IEEE MTT-S International Wireless Symposium (IWS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2016.7585473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The intrinsic performance of the devices is of great meaning during power amplifiers design. A method to update de-embedding network at higher frequency for packaged power devices is put forward based on physical modeling idea. The de-embedding network at 5.8 GHz of a packaged GaN HEMT is presented and its practicability is verified through error analysis. This method is prospected to be applied to other packaged microwave devices.
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