{"title":"Experimental proof of resonant tunneling in MIEIS devices based on ultra-thin high-k oxides and intrinsic quantum well formation","authors":"J. Reyes, Hector Manuel Uribe Vargas","doi":"10.23919/SNW.2017.8242295","DOIUrl":null,"url":null,"abstract":"Resonant tunneling diodes (RTD) are widely used in nano electronics due to their nonlinear properties. In this work, Metal-Insulator-Insulator-Insulator-Semiconductor (MIIIS) devices were fabricated using a gate stack of atomic-layer deposited (ALD) high-k oxides and experimental proof of Resonant Tunneling was obtained due to three Negative Differential Resistance (NDR) zones.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Resonant tunneling diodes (RTD) are widely used in nano electronics due to their nonlinear properties. In this work, Metal-Insulator-Insulator-Insulator-Semiconductor (MIIIS) devices were fabricated using a gate stack of atomic-layer deposited (ALD) high-k oxides and experimental proof of Resonant Tunneling was obtained due to three Negative Differential Resistance (NDR) zones.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
