Pub Date : 2017-12-29DOI: 10.23919/SNW.2017.8242314
Liangyu Chen, Yu-Feng Hsieh, K. Kao
With relaxed SiGe, this work elaborates the correlation of semiconductor band edges and source-drain metal workfunction for the electrical characteristics of p- and n-channel FETs based on numerical simulations. For a given high workfunction source-drain metal, it is found that the on-current, threshold voltage and off-current of p-channel devices increase monotonously with the Ge mole fraction. The trend of the n-channel devices, however, seems more complicated, but it can be interpreted by the band edge variation of SiGe alloy.
{"title":"Undoped SiGe FETs with metal-insulator-semiconductor contacts","authors":"Liangyu Chen, Yu-Feng Hsieh, K. Kao","doi":"10.23919/SNW.2017.8242314","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242314","url":null,"abstract":"With relaxed SiGe, this work elaborates the correlation of semiconductor band edges and source-drain metal workfunction for the electrical characteristics of p- and n-channel FETs based on numerical simulations. For a given high workfunction source-drain metal, it is found that the on-current, threshold voltage and off-current of p-channel devices increase monotonously with the Ge mole fraction. The trend of the n-channel devices, however, seems more complicated, but it can be interpreted by the band edge variation of SiGe alloy.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126981808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-29DOI: 10.23919/SNW.2017.8242317
C. Fan, Y. Chiu, Chien Liu, G. Liou, W. Lai, Yi-Ru Chen, Tun-Jen Chang, Wan-Hsin Chen, Chun‐Hu Cheng, Chun-Yen Chang
In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.
{"title":"Program/erase speed and data retention trade-off in negative capacitance versatile memory","authors":"C. Fan, Y. Chiu, Chien Liu, G. Liou, W. Lai, Yi-Ru Chen, Tun-Jen Chang, Wan-Hsin Chen, Chun‐Hu Cheng, Chun-Yen Chang","doi":"10.23919/SNW.2017.8242317","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242317","url":null,"abstract":"In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131687857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-29DOI: 10.23919/SNW.2017.8242319
E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii
Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.
{"title":"Revisiting room-temperature 1.54 μιη photoluminescence of ErOx centers in silicon at extremely low concentration","authors":"E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii","doi":"10.23919/SNW.2017.8242319","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242319","url":null,"abstract":"Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123851424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-12-29DOI: 10.23919/SNW.2017.8242290
Ming-Huei Lin, Yi-Jia Shih, Chien Liu, Y. Chiu, C. Fan, G. Liou, Chun‐Hu Cheng, Chun-Yen Chang
This work demonstrates a novel multi-stacking PNPN channel structure for nanowire junctionless transistor. With the multi-PNPN channel structure, the design of multi-stacking PNPN junctions can promote the p-type channel layer to achieve fully depleted channel, accompanied with the excellent electrical performances on a steep subthreshold swing of 77 mV/dec and a high on/off current ratio of >107. Besides, utilizing with the constant-voltage-stress measurement, the multi-PNPN channel junctionless FETs with a robust stress reliability was demonstrated.
{"title":"Improved electrical characteristics and reliability of multi-stacking PNPN junctionless transistors using channel depletion effect","authors":"Ming-Huei Lin, Yi-Jia Shih, Chien Liu, Y. Chiu, C. Fan, G. Liou, Chun‐Hu Cheng, Chun-Yen Chang","doi":"10.23919/SNW.2017.8242290","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242290","url":null,"abstract":"This work demonstrates a novel multi-stacking PNPN channel structure for nanowire junctionless transistor. With the multi-PNPN channel structure, the design of multi-stacking PNPN junctions can promote the p-type channel layer to achieve fully depleted channel, accompanied with the excellent electrical performances on a steep subthreshold swing of 77 mV/dec and a high on/off current ratio of >107. Besides, utilizing with the constant-voltage-stress measurement, the multi-PNPN channel junctionless FETs with a robust stress reliability was demonstrated.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131132655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.23919/SNW.2017.8242316
Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Yudai Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai
It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4I13/2 →4I15/2 transition of Er3+. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.
{"title":"Atom probe study of erbium and oxygen co-implanted silicon","authors":"Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Yudai Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai","doi":"10.23919/SNW.2017.8242316","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242316","url":null,"abstract":"It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to <sup>4</sup>I<inf>13/2</inf> →<sup>4</sup>I<inf>15/2</inf> transition of Er<sup>3+</sup>. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129255870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.23919/SNW.2017.8242274
Kyungmin Jang, Nozomu Ueyama, M. Kobayashi, T. Hiramoto
We have investigated dynamic characteristics of ferroelectric Hf02 (FE-HfÓ2) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO2 can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-HfO2 revealed that dynamic term (ρi) of Landau-Khalatnikov equation in MD FE-HfO2 is not constant but depends on Vin due to domain dynamics.
{"title":"Investigations on dynamic characteristics of ferroelectric Hf02 based on multi-domain interaction model","authors":"Kyungmin Jang, Nozomu Ueyama, M. Kobayashi, T. Hiramoto","doi":"10.23919/SNW.2017.8242274","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242274","url":null,"abstract":"We have investigated dynamic characteristics of ferroelectric Hf0<inf>2</inf> (FE-HfÓ<inf>2</inf>) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO<inf>2</inf> can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-HfO<inf>2</inf> revealed that dynamic term (ρ<inf>i</inf>) of Landau-Khalatnikov equation in MD FE-HfO<inf>2</inf> is not constant but depends on V<inf>in</inf> due to domain dynamics.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"C-27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126483426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-04DOI: 10.23919/SNW.2017.8242338
H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barrai, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. de Franceschi, M. Vinet
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
{"title":"28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing","authors":"H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barrai, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. de Franceschi, M. Vinet","doi":"10.23919/SNW.2017.8242338","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242338","url":null,"abstract":"This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128419067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.23919/SNW.2017.8242332
S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee
Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.
{"title":"Graphene-ZnO:N Schottky junction based thin film transistor","authors":"S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee","doi":"10.23919/SNW.2017.8242332","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242332","url":null,"abstract":"Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117093637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.23919/SNW.2017.8242295
J. Reyes, Hector Manuel Uribe Vargas
Resonant tunneling diodes (RTD) are widely used in nano electronics due to their nonlinear properties. In this work, Metal-Insulator-Insulator-Insulator-Semiconductor (MIIIS) devices were fabricated using a gate stack of atomic-layer deposited (ALD) high-k oxides and experimental proof of Resonant Tunneling was obtained due to three Negative Differential Resistance (NDR) zones.
{"title":"Experimental proof of resonant tunneling in MIEIS devices based on ultra-thin high-k oxides and intrinsic quantum well formation","authors":"J. Reyes, Hector Manuel Uribe Vargas","doi":"10.23919/SNW.2017.8242295","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242295","url":null,"abstract":"Resonant tunneling diodes (RTD) are widely used in nano electronics due to their nonlinear properties. In this work, Metal-Insulator-Insulator-Insulator-Semiconductor (MIIIS) devices were fabricated using a gate stack of atomic-layer deposited (ALD) high-k oxides and experimental proof of Resonant Tunneling was obtained due to three Negative Differential Resistance (NDR) zones.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114617650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices.
{"title":"Dopant-segregated metal source tunnel field-effect transistors with schottky barrier and band-to-band tunneling","authors":"C. Shih, Ting-Shiuan Kang, Yu-Hsuan Chen, Hung-Jin Teng, Nguyen Dang Chien","doi":"10.23919/SNW.2017.8242293","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242293","url":null,"abstract":"Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114824062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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