C. Fan, Y. Chiu, Chien Liu, G. Liou, W. Lai, Yi-Ru Chen, Tun-Jen Chang, Wan-Hsin Chen, Chun‐Hu Cheng, Chun-Yen Chang
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引用次数: 2
Abstract
In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.
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