{"title":"Transient charge-based model for SiGe HBTs","authors":"Jobymol Jacob, A. DasGupta, A. Chakravorty","doi":"10.1109/ELECTRO.2009.5441172","DOIUrl":null,"url":null,"abstract":"A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation. The model shows acceptable accuracy in the phase behavior from low frequency up to transit frequency.","PeriodicalId":149384,"journal":{"name":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECTRO.2009.5441172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation. The model shows acceptable accuracy in the phase behavior from low frequency up to transit frequency.
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