A Broadband Power Amplifier MMIC to Compensate the Frequency Dependent Behaviour

Neha Bajpai, Y. Chauhan
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引用次数: 2

Abstract

We present a new approach to design a singlestage broadband power amplifier (PA) monolithic microwave integrated circuit (MMIC). The PA MMIC fabricated in $0.25\mu\mathrm{m}$ GaAs pHEMT process has an integrated Electro-Static-Discharge (ESD) limiter, which can tolerate up to $350\mathrm{~V}$ Human Body Model without failure. The conventional broadband impedance matching network (BIMN) for PAs has the very well-known limitation of opposite impedance rotation. Here, we propose a new approach to reduce the problem of frequency-dependent behavior of broadband PA. The input and output BIMNs are based on a microwave band-pass filter technique using distributed elements.
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一种补偿频率依赖行为的宽带功率放大器MMIC
提出了一种设计单级宽带功率放大器(PA)单片微波集成电路(MMIC)的新方法。以$0.25\ mathrm{m}$ GaAs pHEMT工艺制造的PA MMIC具有集成静电放电(ESD)限制器,可承受高达$350\mathrm{~V}$的人体模型而不会发生故障。传统的宽带阻抗匹配网络(BIMN)具有众所周知的反向阻抗旋转限制。在这里,我们提出了一种新的方法来减少宽带PA的频率依赖行为问题。输入输出bimn基于分布式元件的微波带通滤波技术。
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