A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process

Lu Yuxiang, Li Zekun, Yu Jiayang, Li Huanbo, Zhou Peigen, Lu Haiyan, Chen Jixin
{"title":"A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\\mu \\text{m SiGe}$ HBT process","authors":"Lu Yuxiang, Li Zekun, Yu Jiayang, Li Huanbo, Zhou Peigen, Lu Haiyan, Chen Jixin","doi":"10.1109/IWS55252.2022.9977771","DOIUrl":null,"url":null,"abstract":"A 52.5GHz-66GHz frequency tripler using $0.13\\mu\\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\\mathrm{P}_{\\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7% relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\\mu\\mathrm{m}\\times 200\\mu\\mathrm{m}$ without pads and $880\\mu\\mathrm{m}\\times520\\mu\\mathrm{m}$ altogether.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7% relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种52.5GHz-66GHz高转换增益三倍频器。\mu \text{m SiGe}$ HBT进程
提出了一种采用$0.13\mu\ mathm {m}$ SiGe HBT工艺的52.5GHz-66GHz三倍频器,该三倍频器采用单平衡结构,转换增益高达14.3dB。测量到最大饱和输出功率$(\ mathm {P}_{\text{sat}})$至12.3dBm@57GHz, 3db带宽为13.5GHz(22.7%相对带宽)。采用折叠磁平衡器将单端信号转换为差分信号,其幅值差小于0.5dB,相位差在180°内。还采用了增益增强技术。芯片尺寸为620\mu\ mathm {m}$乘以200\mu\ mathm {m}$,不含焊盘,总共为880\mu\ mathm {m}$乘以520\mu\ mathm {m}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
An 88~100 GHz High-Robustness Low-Noise Amplifier with 3.0~3.5 dB Noise Figure Using $0.1\mu \mathrm{m}$ GaN-on-SiC process A High-Efficiency Transmission Metasurface for Linear Polarization Conversion and Beam Control An Improved Parameter Extraction Approach for GaN HEMT Small-Signal Modelling P/L-Band 60W Broadband GaN Power Amplifier Compact Module Theoretical Analysis and Design of RF Power Harvesters for 50-IoT Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1