Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays

2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC) Pub Date : 2023-07-10 DOI:10.1109/IVNC57695.2023.10188957

A. Schels, F. Herdl, M. Hausladen, Dominik Wohlfartsstätter, M. Bachmann, S. Edler, F. Düsberg, A. Pahlke, P. Buchner, R. Schreiner, W. Hansch

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引用次数: 1

Abstract

Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500.

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场发射阵列积分操作中单个发射尖端的Beta因子映射

场发射阵列的发射均匀性映射提供了对退化机制的重要见解，但通常是费力的、非积分的、昂贵的或不可量化的。在这里，低成本的树莓派HQ相机被用作提取阳极来量化场发射极阵列中的发射分布。利用受控扫描电镜电子束的验证测量证明，将积分电数据与图像数据相结合，可以确定单个发射点的电流-电压特性。利用这些特性量化了30x30硅场发射极阵列在积分工作时的场增强因子。在1µa恒定电流下工作一小时前后的场增强因子分布对比显示，测量前的主动发射针尖从50个增加到测量后的156个。结果表明，由于高场增强尖端的退化加剧，特别是在1500以上，场增强因子的分布向低值偏移。

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2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)

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