Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189022
Paweł Urbański, P. Szyszka, T. Grzebyk
This article presents a construction of a MEMS electron microcolumn with a field emitter in a form of a silicon tip covered with a carbon nanotube layer. Although it ensures high electron current, its focal spot and uniformity is far from optimal. Therefore, to improve the parameters of the electron beam authors proposed to use magnetic focusing. The perpendicular magnetic field is generated by a strong neodymium magnet placed below the cathode. It confines the electrons near the optical axis and prevents them from spreading. The tests proved that it is possible to obtain a small, homogeneous electron beam spot with a diameter lower than 1 mm. Magnetic focusing combined with electron optics significantly improved the quality of the beam, in comparison to the system with only electron optics. In addition, a satisfactory level of current was achieved at the anode. For UA = 2.5 kV, UG = 1.5 kV and UF = 1.4 kV, with additional magnetic focus, the current on the anode was as high as 16 µA, with the distance between the emission cathode and the anode equal to 9.6 mm.
{"title":"Magnetic Focusing of an Electron Beam from a Point Field Emitter","authors":"Paweł Urbański, P. Szyszka, T. Grzebyk","doi":"10.1109/IVNC57695.2023.10189022","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189022","url":null,"abstract":"This article presents a construction of a MEMS electron microcolumn with a field emitter in a form of a silicon tip covered with a carbon nanotube layer. Although it ensures high electron current, its focal spot and uniformity is far from optimal. Therefore, to improve the parameters of the electron beam authors proposed to use magnetic focusing. The perpendicular magnetic field is generated by a strong neodymium magnet placed below the cathode. It confines the electrons near the optical axis and prevents them from spreading. The tests proved that it is possible to obtain a small, homogeneous electron beam spot with a diameter lower than 1 mm. Magnetic focusing combined with electron optics significantly improved the quality of the beam, in comparison to the system with only electron optics. In addition, a satisfactory level of current was achieved at the anode. For UA = 2.5 kV, UG = 1.5 kV and UF = 1.4 kV, with additional magnetic focus, the current on the anode was as high as 16 µA, with the distance between the emission cathode and the anode equal to 9.6 mm.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115141146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189015
J. O'Mara, J. Ludwick, Nathaniel Hernandez, D. Walker, T. Back, M. Cahay, H. Hall
Field emission (FE) characteristics of 2-terminal Au lateral nanoscale vacuum field emission devices with different dielectric substrates is reported in this work. Field orthodoxy is tested with the Murphy Good plot. Poole-Frenkel leakage is presented as a primary mechanism for emission at low voltages through the substrates with some reported burn-in effects removed with correct substrate choice. The results are significant in that the leakage effects can be difficult to discern from pure PE and are thus important to consider in future designs of these types of devices.
{"title":"Effect of Dielectric Substrate on Gold Nanoscale Lateral Vacuum Emission Devices","authors":"J. O'Mara, J. Ludwick, Nathaniel Hernandez, D. Walker, T. Back, M. Cahay, H. Hall","doi":"10.1109/IVNC57695.2023.10189015","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189015","url":null,"abstract":"Field emission (FE) characteristics of 2-terminal Au lateral nanoscale vacuum field emission devices with different dielectric substrates is reported in this work. Field orthodoxy is tested with the Murphy Good plot. Poole-Frenkel leakage is presented as a primary mechanism for emission at low voltages through the substrates with some reported burn-in effects removed with correct substrate choice. The results are significant in that the leakage effects can be difficult to discern from pure PE and are thus important to consider in future designs of these types of devices.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115152868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188883
R. Bhattacharjee, Ranajoy Bhattacharva, S. Guerrera, Nedeliko Karaulac, G. Rughoobur, W. Chern, A. Akinwande, J. Browning
Gated field emitter arrays (GFEAs) can fail due to various mechanisms which are not well understood. In this paper, several proposed failure mechanisms are investigated using simulation and experiment. The modelling performed using CST considers an ion bombardment zone to calculate the locations and number of ions that hit the emitter tip apex. As the starting location of the ions moves away from the tip, the fraction hitting the tip apex increases until $5mu mathrm{m}$ from the tip and then decreases until only ions born directly above the tip impact. Electrical measurements of arcs show that arcs only occur during forward bias with emission rather than in reverse bias indicating the mechanism is not surface breakdown.
{"title":"Understanding the Failure Mechanisms of Silicon Gated Field Emitters","authors":"R. Bhattacharjee, Ranajoy Bhattacharva, S. Guerrera, Nedeliko Karaulac, G. Rughoobur, W. Chern, A. Akinwande, J. Browning","doi":"10.1109/IVNC57695.2023.10188883","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188883","url":null,"abstract":"Gated field emitter arrays (GFEAs) can fail due to various mechanisms which are not well understood. In this paper, several proposed failure mechanisms are investigated using simulation and experiment. The modelling performed using CST considers an ion bombardment zone to calculate the locations and number of ions that hit the emitter tip apex. As the starting location of the ions moves away from the tip, the fraction hitting the tip apex increases until $5mu mathrm{m}$ from the tip and then decreases until only ions born directly above the tip impact. Electrical measurements of arcs show that arcs only occur during forward bias with emission rather than in reverse bias indicating the mechanism is not surface breakdown.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120807377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188974
F. Herdl, Maximillian J. Kueddelsmann, A. Schels, M. Bachmann, S. Edler, Dominik Wohlfartsstätter, F. Düsberg, Alexander Prugger, Michael Dillig, F. Dams, R. Schreiner, C. Coileáin, S. Zimmermann, A. Pahlke, G. Duesberg
In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.
{"title":"Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels","authors":"F. Herdl, Maximillian J. Kueddelsmann, A. Schels, M. Bachmann, S. Edler, Dominik Wohlfartsstätter, F. Düsberg, Alexander Prugger, Michael Dillig, F. Dams, R. Schreiner, C. Coileáin, S. Zimmermann, A. Pahlke, G. Duesberg","doi":"10.1109/IVNC57695.2023.10188974","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188974","url":null,"abstract":"In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127119100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188960
Fabian Hecht, Florian Bauereiβ, J. Sellmair, P. Buchner, M. Hausladen, R. Schreiner
In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).
{"title":"Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters","authors":"Fabian Hecht, Florian Bauereiβ, J. Sellmair, P. Buchner, M. Hausladen, R. Schreiner","doi":"10.1109/IVNC57695.2023.10188960","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188960","url":null,"abstract":"In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125069734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188988
Ze Niu, M. Zhu, E. Bellotti
Using a particle-based Monte Carlo modeling approach we study the characteristics of silicon field emitter devices. We use an unstructured mesh based on tetrahedral elements to describe the device geometry in three dimensions, and we treat silicon and vacuum on equal footing when tracking electrons in both regions. We compare several tunnel models by evaluating the current-voltage characteristics of a single field emitting silicon pillar. Then, we perform an initial model validation, comparing the simulated current-voltage characteristic the measured values for a gated silicon field emitter. Furthermore, we extend our simulation to field emitter arrays (FEAs) to study the screen effect for adjacent emitters.
{"title":"Study of Field Emitters Using Monte Carlo Method","authors":"Ze Niu, M. Zhu, E. Bellotti","doi":"10.1109/IVNC57695.2023.10188988","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188988","url":null,"abstract":"Using a particle-based Monte Carlo modeling approach we study the characteristics of silicon field emitter devices. We use an unstructured mesh based on tetrahedral elements to describe the device geometry in three dimensions, and we treat silicon and vacuum on equal footing when tracking electrons in both regions. We compare several tunnel models by evaluating the current-voltage characteristics of a single field emitting silicon pillar. Then, we perform an initial model validation, comparing the simulated current-voltage characteristic the measured values for a gated silicon field emitter. Furthermore, we extend our simulation to field emitter arrays (FEAs) to study the screen effect for adjacent emitters.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125073735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188995
Alejandro Diaz, L. Velásquez-García
We report the design, fabrication, and characterization of the first monolithically 3-D printed, hyperbolic, compact RF quadrupole mass filters. The devices are made via multimaterial extrusion. We also developed compact electronics to drive the quadrupoles that are compatible with the size, weight, and power constraints of deployable platforms, such as CubeSats (<3 W, up to 400 Vpp sinusoidal amplitude, 1–3 MHz, >2000 voltage steps for 100:1 resolution). Characterization of prototypes in vacuum shows the devices can scan the 1–250 amu mass range and correctly identify Ar.
{"title":"Miniature, 3-D Printed RF Quadrupole Mass Filters for Cubesats","authors":"Alejandro Diaz, L. Velásquez-García","doi":"10.1109/IVNC57695.2023.10188995","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188995","url":null,"abstract":"We report the design, fabrication, and characterization of the first monolithically 3-D printed, hyperbolic, compact RF quadrupole mass filters. The devices are made via multimaterial extrusion. We also developed compact electronics to drive the quadrupoles that are compatible with the size, weight, and power constraints of deployable platforms, such as CubeSats (<3 W, up to 400 Vpp sinusoidal amplitude, 1–3 MHz, >2000 voltage steps for 100:1 resolution). Characterization of prototypes in vacuum shows the devices can scan the 1–250 amu mass range and correctly identify Ar.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123706063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188972
Stewart A. Koppell, John W Simonaitis, M. Krielaart, O. Ates, W. Putnam, K. Berggren, P. Keathley
We describe the design for a heralded electron source made from a standard electron gun, a weak photonic coupler, an electron energy filter, and a single photon detector. We define a figure of merit for the heralding efficiency which describes the sub-Poissonian statistics of the source and can be written in terms of the traditional Klyshko heralding efficiency. Using this figure of merit, we discuss the engineering requirements for efficient heralding. Finally, we discuss potential applications: dose reduction in quantitative bright field STEM and error reduction in electron lithography.
{"title":"Applications in Microscopy and Lithography for a Heralded Electron Source","authors":"Stewart A. Koppell, John W Simonaitis, M. Krielaart, O. Ates, W. Putnam, K. Berggren, P. Keathley","doi":"10.1109/IVNC57695.2023.10188972","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188972","url":null,"abstract":"We describe the design for a heralded electron source made from a standard electron gun, a weak photonic coupler, an electron energy filter, and a single photon detector. We define a figure of merit for the heralding efficiency which describes the sub-Poissonian statistics of the source and can be written in terms of the traditional Klyshko heralding efficiency. Using this figure of merit, we discuss the engineering requirements for efficient heralding. Finally, we discuss potential applications: dose reduction in quantitative bright field STEM and error reduction in electron lithography.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116008301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189017
Xiaoyu Zhou, Shuai Li, Zheng Ouyang
The miniaturization of mass spectrometers is a fast- growing new direction for the mass spectrometry (MS), enabling the transition of MS from laboratory to point of sample collection and and from experts to novice end users. During the past two decades, some major efforts have been put into this field which led significant advancements in both instrumentation as well as application. Here, we review the recent development in MS miniaturization and highlight the state-of-the-art systems as well as new technologies allowing some new capabilities for chemical and biological analysis.
{"title":"Miniature Mass Spectrometers for On-Site Chemical Analysis","authors":"Xiaoyu Zhou, Shuai Li, Zheng Ouyang","doi":"10.1109/IVNC57695.2023.10189017","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189017","url":null,"abstract":"The miniaturization of mass spectrometers is a fast- growing new direction for the mass spectrometry (MS), enabling the transition of MS from laboratory to point of sample collection and and from experts to novice end users. During the past two decades, some major efforts have been put into this field which led significant advancements in both instrumentation as well as application. Here, we review the recent development in MS miniaturization and highlight the state-of-the-art systems as well as new technologies allowing some new capabilities for chemical and biological analysis.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114749414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188981
N. Egorov, K. Nikiforov, M. Bedrina
Work function variations over cathode surface and initial energy spread of emitted electrons are necessary input parameters and initial-boundary conditions for realistic simulations and numerical modeling of field emission electron sources to span millimeter to nanometer scales. This work advances the state of research in the field due to prediction a priori foregoing values for carbon-based cathodes using density functional theory. A new method for constructing a quantum-mechanical cluster model is applied to the study of the properties of systems of solid-state silicon carbide with organic films deposited on it, consisting of graphene sheet and 2D fullerene.
{"title":"Numerical Model Development for Carbon-Based Field Emission Electron Sources","authors":"N. Egorov, K. Nikiforov, M. Bedrina","doi":"10.1109/IVNC57695.2023.10188981","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188981","url":null,"abstract":"Work function variations over cathode surface and initial energy spread of emitted electrons are necessary input parameters and initial-boundary conditions for realistic simulations and numerical modeling of field emission electron sources to span millimeter to nanometer scales. This work advances the state of research in the field due to prediction a priori foregoing values for carbon-based cathodes using density functional theory. A new method for constructing a quantum-mechanical cluster model is applied to the study of the properties of systems of solid-state silicon carbide with organic films deposited on it, consisting of graphene sheet and 2D fullerene.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126452003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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