On the interface recovery of SNOI devices during programming-erasing cycles

Yi-Ling Wei, H. X. Chen, S. Chou, E. Jeng
{"title":"On the interface recovery of SNOI devices during programming-erasing cycles","authors":"Yi-Ling Wei, H. X. Chen, S. Chou, E. Jeng","doi":"10.1109/ISNE.2016.7543293","DOIUrl":null,"url":null,"abstract":"In this paper, we study the interface traps during program/erase (P/E) cycles. By using charge pumping measurement, the charge pumping currents (ICP) of the serial P/E cycled states are compared to the initial one. The ICP decreases after the programmed operation under a constant temperature within 5 P/E cycles. The observation on the recovery of the interface states has been attributed to the hot electron injection stress.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this paper, we study the interface traps during program/erase (P/E) cycles. By using charge pumping measurement, the charge pumping currents (ICP) of the serial P/E cycled states are compared to the initial one. The ICP decreases after the programmed operation under a constant temperature within 5 P/E cycles. The observation on the recovery of the interface states has been attributed to the hot electron injection stress.
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编程擦除周期中SNOI器件的接口恢复
在本文中,我们研究了在程序界面陷阱/擦除(P / E)周期。通过电荷泵送测量,将连续P/E循环状态下的电荷泵送电流(ICP)与初始状态进行了比较。在5个P/E循环内,在恒温下编程运行后,ICP减小。观察到的界面状态的恢复归因于热电子注入应力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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