{"title":"On the interface recovery of SNOI devices during programming-erasing cycles","authors":"Yi-Ling Wei, H. X. Chen, S. Chou, E. Jeng","doi":"10.1109/ISNE.2016.7543293","DOIUrl":null,"url":null,"abstract":"In this paper, we study the interface traps during program/erase (P/E) cycles. By using charge pumping measurement, the charge pumping currents (ICP) of the serial P/E cycled states are compared to the initial one. The ICP decreases after the programmed operation under a constant temperature within 5 P/E cycles. The observation on the recovery of the interface states has been attributed to the hot electron injection stress.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we study the interface traps during program/erase (P/E) cycles. By using charge pumping measurement, the charge pumping currents (ICP) of the serial P/E cycled states are compared to the initial one. The ICP decreases after the programmed operation under a constant temperature within 5 P/E cycles. The observation on the recovery of the interface states has been attributed to the hot electron injection stress.
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