{"title":"Performance Assessment of Dual Metal Graded Channel Negative Capacitance Junctionless FET for Digital/Analog field","authors":"S. Chaudhary, B. Dewan, Chitrakant Sahu, M. Yadav","doi":"10.1109/iSES52644.2021.00042","DOIUrl":null,"url":null,"abstract":"This work focuses on effect of negative capacitance on the Dual Metal Double Gate Graded Channel Junction Less Transistor(DMGC-JLT). The effect of dual metal with graded channel is combined with NCFET to study Ion/Ioff, SS, transconductance, transconductance generation factor and output conductance in comparison to DMGC-JLT. Simulation was carried out using Silvaco ATLAS tool and MATLAB. MATLAB tool is used to solve the 1-D L-K equation. Analyses of the variation in ferroelctric thickness and doping in channel is also performed. The simulation results showed better Ion/Ioff, lower SS, better transconductance and improvement in other factors which is beneficial for both digital and analog applications. Undoped ${HfO}_{2}$ is used as Ferro-electric Material for inducing the negative capacitance effect in baseline device.","PeriodicalId":293167,"journal":{"name":"2021 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iSES52644.2021.00042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work focuses on effect of negative capacitance on the Dual Metal Double Gate Graded Channel Junction Less Transistor(DMGC-JLT). The effect of dual metal with graded channel is combined with NCFET to study Ion/Ioff, SS, transconductance, transconductance generation factor and output conductance in comparison to DMGC-JLT. Simulation was carried out using Silvaco ATLAS tool and MATLAB. MATLAB tool is used to solve the 1-D L-K equation. Analyses of the variation in ferroelctric thickness and doping in channel is also performed. The simulation results showed better Ion/Ioff, lower SS, better transconductance and improvement in other factors which is beneficial for both digital and analog applications. Undoped ${HfO}_{2}$ is used as Ferro-electric Material for inducing the negative capacitance effect in baseline device.
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