A Simple Method for Analysis of Operation of JLFET THz Radiation Sensors

M. Zaborowski, D. Tomaszewski, J. Marczewski, P. Zagrajek
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Abstract

A new approach to an analysis of the operation of a “black box” device generating a DC output signal is presented. The signal is measured using a lock-in in voltage and current modes. A measured small frequency output admittance is used to develop an equivalent circuit of the device. The method allows for conclusions on a sensor internal structure and operation principles. It is illustrated by analysis of the operation of a SOI JLFET THz radiation sensor.
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一种分析JLFET太赫兹辐射传感器工作原理的简单方法
提出了一种分析产生直流输出信号的“黑箱”器件运行的新方法。信号是用电压和电流模式的锁相测量的。测量的小频率输出导纳用于开发该装置的等效电路。该方法允许得出关于传感器内部结构和操作原理的结论。通过SOI JLFET太赫兹辐射传感器的工作分析说明了这一点。
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