{"title":"High-sensitivity split-contact magnetoresistors on lightly doped silicon substrates","authors":"G. F. Santillan-Quinonez, C. Galup-Montoro","doi":"10.1109/LASCAS.2014.6820254","DOIUrl":null,"url":null,"abstract":"In this paper we show that silicon split-contact magnetoresistors with geometric dimensions of the order of the Debye length (LD) can have much higher sensitivities than the usual devices with much larger length and width than LD. Numerical simulations carried out with Comsol Multiphysics show that silicon n-type magnetoresistors with dimensions of the order of LD can have magnetic sensitivity as high as 60%/T which is ten times higher than usual sensitivities.","PeriodicalId":235336,"journal":{"name":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2014.6820254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper we show that silicon split-contact magnetoresistors with geometric dimensions of the order of the Debye length (LD) can have much higher sensitivities than the usual devices with much larger length and width than LD. Numerical simulations carried out with Comsol Multiphysics show that silicon n-type magnetoresistors with dimensions of the order of LD can have magnetic sensitivity as high as 60%/T which is ten times higher than usual sensitivities.
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